Tuesday February 17, 8:05 am Eastern Time
Company Press Release
SOURCE: Integrated Silicon Solution, Inc.
ISSI Showcases Quarter-Micron Memory Process Technology
Production of New Low Power SRAM Device Highlights ISSI's 0.25-Micron Process
Expertise
SANTA CLARA, Calif., Feb. 17 /PRNewswire/ -- Integrated Silicon Solution, Inc. (Nasdaq: ISSI - news) today
unveiled the company's first product manufactured using quarter-micron process technology. The IS62LV12816L, a
128K x 16 asynchronous SRAM, is a six-transistor SRAM design and is a direct result of the company's successful
strategy of process co-development with foundry partners.
The device's high-speed, very low power features make it ideal for the telecommunications, networking, portable
and hand-held systems markets. The IS62LV12816L marks ISSI's continued emphasis on these markets and moves
the company to the forefront of the SRAM 0.25-micron process technology arena.
''The IS62LV12816L, with its leading 0.25-micron process, highlights ISSI's continuing emphasis on developing
advanced memory technology for the high growth telecom, networking and portable markets,'' said Bob Cushman,
ISSI vice president of corporate marketing. ''Our unique process development agreements with foundry partners
enable us to excel in memory and embedded memory design and development.''
ISSI's Pioneering Manufacturing Approach
ISSI's hybrid fab/fabless manufacturing strategy has been a cornerstone of the company since it was founded in
1988. The design and process engineering development expertise at ISSI is coupled with the manufacturing and
process capabilities of its foundry partners. ISSI allows its advanced standard memory products to be used as
development and production ramp vehicles for high volume processes by selected industry-leading foundries. The
foundries' manufacturing facilities and volume production capabilities complement ISSI's internal expertise in memory
design, process technology and test.
Cushman noted that the new SRAM can also be manufactured using the upcoming 0.25-micron process at
WaferTech. This wafer fab facility is a joint venture begun in 1996 by Taiwan Semiconductor Manufacturing Co.
(TSMC), Altera, Analog Devices and ISSI in Camas, Washington. The facility is scheduled for production in late
1998.
''The quarter-micron process and six-transistor cell developments were achieved due to our commitment to R & D,''
Cushman said. ''Our process roadmap is right on schedule, and we expect to announce the next major step, a
0.18-micron SRAM process, within the next year.''
IS62LV12816L Applications and Features
ISSI designed the IS62LV12816L for portable system markets such as cell phones, where the low power
consumption feature is crucial. The device features a maximum standby power of 50 (Watts, access times of 70, 100
and 120 ns and operation at 3.0V. Its six-transistor cell design provides ISSI a clear path to devices operating at
lower voltages -- 2.5V and lower -- which the company expects to introduce later this year.
Other product features include:
Fully static operation: no clock or refresh required
Three state outputs
Data select controls for upper and lower bytes
Industrial temperature range
TTL compatible interface levels
CMOS low power operation
120 mW (typical)operating
6 uW (typical) CMOS standby power
Package, Price and Availability
Now in volume production, the IS62LV12816L (120 ns) is priced at $14 in quantities of 1,000 in a JEDEC
standard 44-pin TSOP (Type II) package. Integrated Silicon Solution, Inc., the complete memory solution company,
designs, develops and markets high-performance Flash, Serial Flash, SRAM, EPROM, E2PROM, DRAM and
embedded memory devices including DSP support products, microcontrollers and voice products. ISSI's products
are used in networking systems, data communications, telecommunications, office equipment, personal computers,
instrumentation, and consumer products. The company's worldwide headquarters is located in Santa Clara,
California. Founded in 1988, ISSI is ISO certified and has approximately 500 employees worldwide. The company
has offices in the United States and Europe and subsidiaries in Taiwan, China, and Hong Kong. Visit ISSI's Web site
at issiusa.com.
This news release contains forward-looking statements that are subject to risks and uncertainties that could cause
volatility in the company's business, operating results or financial condition. Actual results may differ from current
expectations due to changes in industry conditions, changes in average selling prices for the company's products,
imbalances between supply and demand, the level of market acceptance of the company's products, scheduled
production transfer of new processes, competition, the cancellation, changes in product development schedules,
changes in manufacturing schedules, modification or delay of orders from customers or other factors. Further
information that could affect the company's results is detailed in ISSI's periodic filings with the Securities and
Exchange Commission, including its Annual Report on Form 10K for the fiscal year ended Sept. 30, 1997.
SOURCE: Integrated Silicon Solution, Inc.
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