SOITEC, Silicon-On-Insulator TEChnologies Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : SOITEC, Silicon-On-Insulator TEChnologies

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

To: kinkblot who started this subject	2/13/2004 11:49:32 PM
From: kinkblot	of 83

IBM's SSDOI technology domino.research.ibm.com www-306.ibm.com The strained condition that is initially created by the Si-SiGe mismatch is 'fixed' when an oxide layer is grown on the Si side, and is still retained after the SiGe is completely removed. This is a layer transfer technique. The original SiGe wafer is cleaved in a fracture plane created by hydrogen implant, à la SOITEC. WT

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next