Formerly About SanDisk Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : Formerly About SanDisk

SNDK 175.49

-0.6%

Oct 28 3:59 PM EDT

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

To: Sam who wrote (1016)	8/7/2013 8:08:52 AM
From: sylvester80	of 1161

Samsung ships first 3D vertical NAND flash, defies memory scaling limits By Jon Fingas posted Aug 5th, 2013 at 11:34 PM 60 engadget.com The main challenge in producing higher-capacity flash storage is one of scale -- as density goes up, so does cell interference and the chances of a breakdown. Samsung may have overcome that barrier (if temporarily) by mass-producing the first 3D vertical NAND memory, or V-NAND. Instead of putting memory cells on a conventional 2D plane, the company reworked its long-serving Charge Trap Flashtechnology to create a 3D cell structure with more breathing room. The result is flash that improves both reliability and speed at higher densities; Samsung claims that the new technology is 2-10X more reliable than its ancestors, and twice as quick at writing data. The initial V-NAND chip offers a 128-gigabit (16GB) capacity that we've seen before, but its underlying technique should scale quickly when a chip can include as many as 24 stacked cell layers. Although Samsung hasn't named the first devices with V-NAND inside, we won't be surprised if our next phone or SSD is particularly spacious. SHOW FULL PR TEXT SOURCE: Samsung

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next