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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 214.25-3.1%Jan 6 3:59 PM EST

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To: TechieGuy-alt who wrote (18980)11/14/2000 1:18:44 AM
From: Pravin KamdarRead Replies (1) of 275872
 
TG,

The answer to this question is beyond the scope of the intended reader (not you, but in general, and I don't know if I have the energy to explain it right now). Surfice it to say that it is the smaller separation between source and drain, gate length, that requires smaller Vds (to avoid punch through), that in tern limits Vgs, that forces a thinner gate oxide since the threshold voltage, Vth, is directly proportional to the capacitance of the gate oxide -- so in order to lower Vth to be in line with the device's geometry, the gate oxide must be decreased (from simple capacitor physics).

Go Broncos!

Pravin.
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