WDC/Sandisk Corporation Message Board

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Technology Stocks : WDC/Sandisk Corporation

WDC 187.70

+9.0%

Jan 2 9:30 AM EST

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To: Cary Salsberg who wrote (28234)	5/19/2005 12:43:02 AM
From: etchmeister	of 60323

I believe there are many factors that play into the cost crossover: 200 mm blank silicon wafer used to be very low relative to 300mm substrates (that changed dramatically but it's probably only one factor besides other). Die size is another factor - unfortunately I lost the link but DDR2 die approx 10% larger Micron was bashed in the past for delaying investments in 300 mm - but Micron has a technology advantage by shrinking the cell size via 6F2 (I "parked" an article about 6F2 on the MU board); 6F2 allows Micron to use a .13 micron process that results in the same die size compared to a competitor that uses .11 micron Micron is way, way ahead with regards to 6F2; that coupled with Micron moving to 300mm and to copper (first DRAM maker adopting copper) should bode well for Micron in the DRAM arena. Besides there are process related issues: IMHO it's not an easy task to transfer a process from 200mm to 300mm even when manufacturing the same device; so in case they are at 90 nm or 110 nm the question arises putting effort into 200mm or decide to shift over to 300mm please see article from IFX attached semiconductor-technology.com IMHO a great deal of capex is being used to transform manufacturing capacity from 200 mm to 300 mm due to cost advantage; the key driver is not really to add capacity rather produce similar output at lower cost.

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