Thanks Harry; I'll be watching TXCC (go up!). Recent purchases that I am still holding (underwater except for 1) are:
SEBL 35.35 3/12/02
QLGC 50.45 3/11/02
CYMI 44.60 3/11/02
KOPN is presenting at 2002 GaAs MANTECH conference in SanDiego; you may have already seen this;
Kopin Presents Next-Generation HBT Results for Wireless & Fiber
Optic <KOPN.O>
Kopin Presents Next-Generation HBT Results for
Wireless & Fiber-Optic Circuits; Company Discusses Advanced Wafer
Engineering-TM- Techniques for Superior Transistor Performance
TAUNTON, Mass.--(BUSINESS WIRE)--April 11, 2002--Kopin Corporation
(Nasdaq: KOPN), the leading provider of gallium arsenide (GaAs)
heterojunction bipolar transistors (HBTs) for wireless and fiber-optic
telecom applications, today will present its latest advancements in
the development of InGaP/GaAsInN (GAIN) and InP HBTs at the 2002 GaAs
MANTECH Conference in San Diego. The Company has achieved new
performance levels for GAIN and InP HBTs by using its advanced Wafer
Engineering(TM) technology.
"Kopin is using new, advanced approaches to engineer platforms for
next-generation power amplifiers and fiber-optic circuits," said Dr.
John C.C. Fan, Kopin's president and chief executive officer. "Through
a combination of new alloys and band-gap engineering, we are enhancing
the performance of HBT structures and providing custom-designed
features for new applications. In band-gap engineering, the material
compositions are carefully and systematically programmed to
controllably grade the energy band gap, which optimizes circuit speed
and power efficiency. We are delighted with our rapid progress in
improving the HBT transistor performance."
"By using new alloys, our R&D team has focused on developing HBT
platforms with performance well beyond what previously has been
available," said Dr. Roger E. Welser, Director of Transistor
Technology at Kopin. "We have achieved a 2x increase in DC current
gain and a 10-20 percent increase in current cut-off frequency by
engineering the band characteristics of key layers within the GAIN and
InP HBTs. We expect reduced power consumption, lower operating
voltages, and enhanced DC and RF performance to be key differentiators
for our technology in the future, enabling our circuit partners to
develop superior power amplifiers and fiber-optic circuits."
Both GAIN and InP HBTs are grown on Kopin's Metalorganic Chemical
Vapor Deposition (MOCVD) production platforms using high-volume growth
algorithms. The Company will present the results at the GaAs MANTECH
Conference today in a technical paper, "Base Layer Band-Gap
Engineering for III-V Bipolar Devices." Advanced Wireless
Semiconductor Company, the University of California at San Diego and
Rockwell Scientific collaborated with Kopin on this project.
About Kopin
Kopin is a leading developer and manufacturer of HBT wafers and
high-resolution, miniature flat panel displays for telecommunications
and digital imaging applications that enhance the delivery and
presentation of video, voice and data. Telecommunication providers are
using Kopin's HBT wafers for power amplifier circuits used in wireless
digital phones, and gigabit circuits for fiber optic and Internet data
transmission. The Company has combined advanced AMLCD and integrated
circuit technology to produce its CyberDisplay family of ultra-small,
high-density imaging devices. The Kopin CyberDisplay family has won
many international awards for innovation, and now includes the
CyberDisplay 1280, 640C, 320 and 320C - providing OEMs with powerful,
high-quality display solutions for a range of devices, from consumer
electronics such as camcorders and digital cameras to next-generation
Internet wireless handsets.
For more information, please visit Kopin's Web site at
www.kopin.com.
CyberDisplay and Wafer Engineering are trademarks of Kopin.
Statements in this news release about Kopin Corporation's GAIN
and InP HBTs are made under "safe harbor" provisions of the Private
Securities Litigation Reform Act of 1995. These statements involve a
number of risks and uncertainties that could materially affect future
results. Among these risk factors are general economic and business
conditions and growth in the gallium arsenide integrated circuit and
materials industries, the impact of competitive products and pricing,
availability of integrated circuit fabrication facilities, the
Company's ability to successfully expand its production facilities,
cost and yields of HBT transistor wafers, loss of significant
customers, acceptance of the Company's products, continuation of
strategic relationships, and other risk factors and cautionary
statements listed from time to time in the Company's periodic reports
and registration statements filed with the Securities and Exchange
Commission, including but not limited to, the Company's Annual Report
on Form 10-K for the year ended December 31, 2001 and subsequent 10Q
filings.
--30--ch/bos*
CONTACT: Matthew Micci or Richard Sneider
Kopin Corporation
(508) 824-6696
mmicci@kopin.com
rsneider@kopin.com
or
Ehren Lister
Sharon Merrill Associates, Inc.
(617) 542-5300
elister@investorrelations.com
TodINDUSTRY KEYWORD: COMPUTERS/ELECTRONICS INTERNET NETWORKING
SOFTWARE TELECOMMUNICATIONS
SOURCE: Kopin Corporation
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