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Technology Stocks : Microsemi (MSCC) Strong Earnings & BTB
MSCC 68.740.0%May 29 5:00 PM EST

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To: Norrin Radd who wrote ()6/6/1999 8:53:00 PM
From: SemiBull  Read Replies (1) of 1445
 
Microsemi Announces Breakthrough High Voltage MOSFET That Cuts Device
Size 40 Percent in Medical Implant Application

Use of Implantable Cardio Defibrillators Growing at an Annual Rate
Exceeding 20 Percent

SANTA ANA, Calif.--(BUSINESS WIRE)--June 4, 1999-- Microsemi Corp. (Nasdaq:MSCC -
news) Friday announced that it has introduced a new high voltage MOSFET for implantable
cardio defibrillator (ICD) applications that provides a size reduction of 40% over currently
available devices.

Component size is critical in the design of implantable electronic systems.

Designated the MSAFA1N100D, the new device is the first to be developed jointly by
Microsemi, a leader in discrete semiconductors for human implantable electronics, and
Advanced Power Technology, Bend, Ore., a leader in advanced high power, high voltage
MOSFET design.

This joint venture project was completed in only eight weeks as part of the recently
announced agreement between the two companies that allows Microsemi to serve the
implantable medical market with APT's patented Power MOS V MOSFET technology.

The Microsemi device will be used as an overvoltage protection circuit in the next
generation of implantable cardio defibrillators. These implants must withstand high voltages
induced either by the ICD itself or by external defibrillation in emergency room and other
treatment procedures.

New types of multiple-phase high voltage therapies are driving broader use of implantable
cardio defibrillators, which can require 10 MOSFETs each. It is estimated that this market
will grow at an annual rate of more than 20%, with nearly 70,000 such implants last year
alone.

Although much smaller than prior implantable MOSFETs, the new Microsemi device provides
equivalent electrical performance. In addition to meeting the required specifications of
1,000 Volts and 13.5 Ohms at body temperature (37C), Microsemi's new device provides
ICD designers with the ability to reduce battery drain by taking advantage of the
MSAFA1N100D's gate charge spec of less than 20nC.

''For implantable devices that must function five to seven years, or more, from a single
Lithium Ion battery, the MSAFA1N100D provides a significant advance for next-generation
ICD designs,'' reported Manuel Lynch, worldwide marketing director at Microsemi.

''The speed with which we addressed this program is a clear indication of Microsemi's
commitment to the implantable market segment. Our decision to create new implantable
devices is receiving a warm welcome from the industry,'' Lynch said. He added that the
company is continuing to work closely with leading defibrillator manufacturers to create
some dramatic new ways to reduce the size of implants even further.

''Equally significant,'' Lynch commented, ''Our eight-week product definition and
development process not only resulted in the MSAFA1N100D die, but also provided
groundwork for the breakthrough flip chip MOSFETs we'll introduce next year.'' Flip chips
mount directly to printed circuit boards, saving space and reducing manufacturing costs.

Processes created during the MSAFA1N100D development will provide the basis for other
Microsemi product roadmaps. Later this year a version of the device will be available for
high-voltage, ultra small products both in medical applications like MRI equipment and for
commercial applications such as lighting ballasts.

Another version of the MSAFA1N100D was developed simultaneously for Microsemi's
upcoming Powermite 3 package that eliminates the costly need for wire bonding
three-terminal devices like transistors, SCRs, and low dropout power regulators
manufactured by its recently acquired Linfinity Division. This version uses a specially
developed solderable contact surface, a first ever in MOSFET design.

Microsemi is a global supplier of high reliability and commercial analog integrated circuits
and power and signal discrete semiconductors for the satellite, telecommunications,
computer and peripherals, military/aerospace, industrial/commercial, and medical markets.
More information may be obtained by contacting the company directly or by visiting its web
site at microsemi.com.

''Safe Harbor '' Statement under the Private Securities Litigation Reform Act of 1995:
Any statements set forth in the news release that are not historical in nature are
forward-looking statements. Forward-looking statement are inherently subject to risks and
uncertainties, some of which cannot be predicted or quantified. Potential risks and
uncertainties include, but are not limited to, such factors as the strength and competitive
pricing environment of the semiconductor marketplace, demand for and acceptance of the
company's products, the success of planned marketing and promotional campaigns, realization
of backlog, business and economic conditions such as the current industry conditions,
customer order preferences, company strategies, environmental matters, litigation,
inventory obsolescence, the factors mentioned elsewhere in this news release, as well as
other factors identified in the company's most recent Form 10-K and subsequent Forms
10-Q filed by the company with the Securities and Exchange Commission.

NOTE TO EDITORS: Additional information on Microsemi and its products is available at
the company's web site: www.microsemi.com. Please forward readers inquiries to Microsemi
Marketing Communications, 11861 Western Ave., Garden Grove, CA 92841-2119.

INVESTOR INQUIRIES: David R. Sonksen, Microsemi Corp., Santa Ana, CA,
714/979-8220 or Sean Collins or William F. Coffin, Coffin Communications, Sherman Oaks,
CA, 818/789-0100.

Contact:

Microsemi Corp., Santa Ana (financial contact)
David R. Sonksen, 714/979-8220
fax, 714/966-5256
or
Cliff Silver (editorial contact), 714/372-8357
fax, 714/372-3566
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