Milehigh, I wonder what this Samsung 1 Gb DDR SDRAM means to the state of the art DRAM landscape and Rambus? 1 Gb, fast data rate, state of the art 0.13-micron design rules. I used to think I could keep up with all the latest news in computer memory. Now, the news seems to have become a random noise generator. I'm going to post this on Intel to see if folks there might see where it fits. Maybe it's slow re latency, or will not be configured in addressesXbits to fit into regular desktops?
semibiznews.com
Daily news for semiconductor industry managers
Samsung plans to start shipping
1-Gbit DRAMs this year
A service of Semiconductor Business News, CMP Media Inc.
Story 9 a.m. EST/6 a.m., PST, 6/28/99
AUSTIN, Tex.--At press conference here for Korean
journalists, Samsung Electronics Co. Ltd. today announced
it has developed a 1-gigabit Double Data Rate
synchronous DRAM, which operates at 350 HMz.
The 1-Gbit DDR SDRAM was developed with
0.13-micron design rules, said Samsung, which claimed to
be the first chip maker to create such a device. Samsung
officials maintained that the 1-Gbit memory is 30-40%
smaller than similar chips developed by competitors. The
memory operates at 1.8 volts.
Samsung told the group of Korean journalists that it will
be able to forgo expensive 300-mm wafers and
argon-fluoride (ArF) 193-nm lithography systems in
volume production of the 1-Gbit DRAM. The company
plans to put the memory into volume production this year
using existing krypton-fluoride (KrF) excimer lithography.
"The development of the production-ready 1-Gbit DDR is
significant in that we were successful in applying the
0.13-micron design rule to semiconductor production,"
said Chang-gyu Hwang, executive vice president at
Samsung. "We are now able to secure competitiveness in
the conventional semiconductor area, and will be in a
competitive position in the 256-Mbit market as well.
"We are planning to ship 1-Gbit DDR SDRAM samples to
our customers by year's end," he added.
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