This surely cannot be good news for CYMI, or am I missing something here?
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Samsung plans to start shipping 1-Gbit DRAMs this year
A service of Semiconductor Business News, CMP Media Inc.
Story 9 a.m. EST/6 a.m., PST, 6/28/99
AUSTIN, Tex.--During a press conference here for Korean journalists, Samsung Electronics Co. Ltd. today announced it has developed a 1-gigabit Double Data Rate synchronous DRAM, which operates at 350 MHz.
The 1-Gbit DDR SDRAM was developed with 0.13-micron design rules, said Samsung, which claimed to be the first chip maker to create such a device. Samsung officials maintained that the 1-Gbit memory is 30-40% smaller than similar chips developed by competitors. The memory operates at 1.8 volts.
Samsung told the group of Korean journalists that it will be able to forgo expensive 300-mm wafers and argon-fluoride (ArF) 193-nm lithography systems in volume production of the 1-Gbit DRAM. The company plans to put the memory into volume production this year using existing krypton-fluoride (KrF) excimer lithography.
"The development of the production-ready 1-Gbit DDR is significant in that we were successful in applying the 0.13-micron design rule to semiconductor production," said Chang-gyu Hwang, executive vice president at Samsung. "We are now able to secure competitiveness in the conventional semiconductor area, and will be in a competitive position in the 256-Mbit market as well.
"We are planning to ship 1-Gbit DDR SDRAM samples to our customers by year's end," he added. |
