Trikon, International Sematech produce 25-nm trenches with optical lithography
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Story posted 9 a.m. EST/6 a.m., PST, 8/13/99
NEWPORT, Wales -- A multinational team of researchers here announced today that it has
developed advanced optical lithography, photoresist and etching capabilities that can produce
trenches only 25 nanometers, or 0.025 micron, in width.
The research project included Newport-based Trikon Technologies Ltd. and the Resist Test Center
of International Sematech in Austin, Tex. In June, Trikon, in another collaboration with International
Sematech successfully the production of semiconductor contact holes of 30 nm (see June 17 story).
The trenches were produced using an advanced deep-ultraviolet 193-nm CARL photoresist system
developed by researchers at Infineon Technologies AG in Erlangen, Germany. The process includes
a unique chemical biasing step for definition of very small trenches and contact holes.
Photolithography was performed on a 0.60 NA (numerical aperture) 193-nm microstepper using a
standard binary reticle. Etch processes were carried out on Trikon Omega plasma etchers, using
ICP and MORI plasma modules.
"The small trenches can be filled with metals for interconnect or dielectrics for isolation, making
even smaller circuits with greater function possible in the future," said Gerhard Gross, International
Sematech's director of lithography. |
