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Query: (Hora Heinrich )
5 of 2487093 matched 1-5
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Patent Issued Title Score
US05319688 06/07/1994 Pneumatic safety equipment to prevent the overheating of nuclear reactors 77%
US04719482 01/12/1988 Three-dimensional color television 77%
US04199685 04/22/1980 Laser beam activated ion source 77%
US04090855 05/23/1978 Method and apparatus for separation of gaseous particles of different masses by centrifugal forces 77%
US03730979 05/01/1973 METHOD AND MEANS FOR PARTICLE AND LIGHT WAVE INTERACTION 77%
Query: ( Baranov V)
8 of 2487093 matched 1-8
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Patent Issued Title Score
US05847493 12/08/1998 Hall effect plasma accelerator 77%
US05845880 12/08/1998 Hall effect plasma thruster 77%
US05751113 05/12/1998 Closed electron drift hall effect plasma accelerator with all magnetic sources located to the rear of the anode 77%
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US05616478 04/01/1997 Method for amplification of nucleic acids in solid media 77%
US05478730 12/26/1995 Method of preparing polypeptides in cell-free translation system 77%
US05412684 05/02/1995 Microwave excited gas laser 77%
US04545653 10/08/1985 Focusing elements and system for producing a prescribed energy distribution along an axial focal zone 77%
Popovici; Galina
patents.ibm.com
Inventor(s): Popovici; Galina , Columbia, MO
Prelas; Mark A. , Columbia, MO
Sung; T. , Columbia, MO
Khasawinah; S. , Columbia, MO
Applicant(s): Nonophase Diamond Technologies, Inc., Vancouver, Canada
Issued/Filed Dates: Jan. 28, 1997 / Sept. 27, 1994
Application Number: US1994000313641
IPC Class: H01L 021/225;
Class: Current: 438/105; 438/468; 438/535; 438/558;
Original: 437/169; 437/160; 437/171; 437/173;
Field of Search: 437/160,169,168,171,173,954,162 257/077 168/DIG. 93,99,35
Priority Number(s): Sept. 27, 1994 US1994000313641
Abstract: A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
Attorney, Agent, or Firm: Chernoff, Vilhauer, McClung & Stenzel;
Primary/Assistant Examiners: Thomas; Tom; Mulduri; S.
U.S. References: Show the 1 patent that references this one Patent Issued Inventor(s) Title
US4398343 8 /1983 Yamazaki Method of making semi-amorphous semiconductor device
US5002899 3 /1991 Geis et al. Electrical contacts on diamond
US5055424 10 /1991 Zeidler et al. Method for fabricating ohmic contacts on semiconducting diamond
US5075757 12 /1991 Ishii Ohmic contact electrodes for semiconductor diamonds
US5086014 7 /1992 Miyata et al. Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film
US5210431 5 /1993 Kimoto et al. Ohmic connection electrodes for p-type semiconductor diamonds
US5243199 9 /1993 Shiomi et al. High frequency device
US5382808 1 /1995 Dreifus et al. Metal boride ohmic contact on diamond and method for making same
US5382809 1 /1995 Nishibayashi et al. Semiconductor device including semiconductor diamond
First Claim: Show
patents.ibm.com
Inventor(s): Anderson; David F. , Batavia, IL
Kwan; Simon W. , Geneva, IL
Applicant(s): Universities Research Association, Inc., Washington, DC
Issued/Filed Dates: March 30, 1999 / March 27, 1997
Application Number: US1997000829492
IPC Class: H01J 009/02;
Class: Current: 445/051; 313/311; 427/078; 445/058;
Original: 445/051; 445/058; 313/311; 427/078;
Field of Search: 445/51,58 427/078 313/311,309
AGAIN...the ONe referance..to the LANDMARK one:
Government Info:
This invention was made with Government support under Contract No. DE-AC02-76CH03000 awarded by the United States Department of Energy. The Government has certain rights in the invention.
Abstract: A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10-4 Torr and about 10-7 Torr, (b) increasing the vacuum to at least about 10-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.
Attorney, Agent, or Firm: McAndrews, Held & Malloy, Ltd.;
Primary/Assistant Examiners: Ramsey; Kenneth J.;
U.S. References: (No patents reference this one) Patent
Chucka
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