Hitachi ups DRAM density to 512 Mbits with advanced packaging
By EBN staff
Electronic Buyers' News
(09/13/99, 12:33:54 PM EDT)
Hitachi Semiconductor (America) Inc. is pushing the density of its DRAM line with the introduction of a 512-Mbit stacked device.
The company's Double Density Packaging technique crams two 256-Mbit SDRAM devices into the same space as a single-chip package, allowing designers to fit twice the DRAM capacity into the same standard module footprint, the company said.
The PC100/133 SDRAM ICs are available in x4, x8 and x16-bit organizations and are aimed at the increasing main memory needs of high-end computing systems.
According to Hitachi, San Jose, the 3.3-V DDP devices have the same form, fit and function as a monolithic device and use a standard 54-pin, 400-mil TSOP package that is backward compatible with 128-Mbit and 256-Mbit DRAM.
Demand for such high-density modules is fast growing is a range of computing environments, according to module makers, which say the Hitachi device will yield DIMMs up to 2 Gbytes.
"We see significant market demand now for 1-GByte and 2-GByte memory modules," particularly among OEMs building high-end, multi-processor servers and networking equipment, said Arthur Sainio, marketing manager at Smart Modular Technologies Inc., Fremont, Calif., in a statement.
Hitachi's 512-Mbit, PC100/133 DDP SDRAMs are $400 in 1,000-piece quantities. Samples will be available in November, with volume production slated for the first quarter of 2000. |
