SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Rambus (RMBS) - Eagle or Penguin
RMBS 96.40+5.4%Dec 19 9:30 AM EST

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: John Walliker who wrote (34247)11/12/1999 1:29:00 PM
From: wily  Read Replies (1) of 93625
 
.
Reply from Paul DeMone (emailed to me):

----------------------------------------------------------------------

First of all, let me make this perfectly clear. I am not privy to any
Rambus technical material under NDA, only
what is in the public domain. Secondly, for a PWB microstrip trace with
characteristic impedance of 28 Ohms,
the specific capacitance is around 5 pF per inch. Thus complete
compensation for 2.0 to 2.4 pF of device input
capacitance from the trace being "narrowed in the vicinity of memory chip
connections" is hard to believe. If my
critic is willing to back up this claim with a digitized hardcopy from a
time domain reflectometry tests of a bare
and a populated RIMM I will be happy to examine it. This approach also
risks introducing non-uniformities in
the channel impedance and causing signal degradation and reflections.
Perhaps this might be contributing to the
well publicized problems with Camino motherboards.

The question of 50 Ohms vs 28 Ohms Z0 affects the specific capacitance of
signal traces, and therefore the degree
to which device loading will slow down the signal wavefront propagation
velocity. But the basic underlying maximum
speed is set by the PWB dielectric constant, not the characteristic
impedance and calling time-of-flight delays
"non-existent" is utter nonsense. Regardless of the degree of waveform
velocity degradation from device loading
the physical aspect of DRDRAM with up to 28 inches or more of difference
in round trip path length between the
chipset and a near device and far device causes significant addition to
the read latency seen by the chipset.
This is openly demonstrated by the capability of increasing tCAS in near
devices by 2.5, 5.0, 7.5 and 10.0 ns
under firmware/chipset control.

Don't take my word for it, here's a quote from the description of the
TCDLY0 and TCDLY1 control register fields
from page 43 of the NEC datasheet for the uPD488448:

"This adds a programmable delay to Q(read data) packets, permitting round
trip read delay to all
devices to be equalized"

I don't know about rambus guys, but I never have the design time or
silicon area to waste adding control registers
and their associated functional logic to my chips to address
"non-existent" system effects.
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext