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Technology Stocks : Intel Corporation (INTC)

INTC 35.53

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Nov 14 9:30 AM EST

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To: Saturn V who wrote (92494)	11/15/1999 2:41:00 PM
From: THE WATSONYOUTH	Read Replies (1) of 186894

Re: "Intel uses Cobalt Silicide for the gate material. Assume that a thin layer of polysilicon is deposited as gate, followed by a thick layer of Cobalt Silicide. Now the etching is a two step process. First a standard anisotropic etch all the way down to the gate oxide.Now use an isotropic etch which etches polysilicon much more rapidly than it etches CoSi. This should give the desired etch profile, as the lateral removal of polysilicon gradually exposes more CoSi for etching." The cobalt silicide is a salicide process. It is not deposited on the gate poly prior to etch. It is formed selectively on the gates and diffusions after the final source/drain anneal. THE WATSONYOUTH

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