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Technology Stocks : Intel Corporation (INTC)
INTC 40.56+10.3%Nov 28 12:59 PM EST
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To: THE WATSONYOUTH who wrote (92505)11/15/1999 4:53:00 PM
From: Saturn V  Read Replies (1) of 186894
 
Ref- <The cobalt silicide is a salicide process. It is not deposited on the gate poly prior to etch.>

You are right. I forgot about the problems in plasma etching CoSi. Ok, suppose you deposited a thin layer of heavily doped polysilicon, followed by a thick layer of lightly doped polysilicon. The isotropic etch will etch the heavily doped poly a lot faster, giving the notch profile.

Still have the same issue of process control of poly feature size.

Will appreciate your feedback from IEDM.

This has been a interesting topic for speculation.

Regards.
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