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To: Saturn V who wrote (92523)11/15/1999 6:30:00 PM
From: THE WATSONYOUTH  Read Replies (1) of 186894
 
Re: "Ok, suppose you deposited a thin layer of heavily doped polysilicon,followed by a thick layer of lightly doped polysilicon. The isotropic etch will etch the heavily doped poly a lot faster, giving the notch profile."

Insitu N+ doped poly will indeed etch much faster in an isotropic etch. However, it would not work well for the PFET. Alternately, if a very thin poly layer was deposited, masked, and implanted, it would be very difficult to prevent the tail of the implant from going thru the gate oxide into the channel. This N dopant would compensate the P doping in the channel and I doubt you could control Vt. Maybe you should consider the DAMASCENE approach.

THE WATSONYOUTH
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