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Politics : Formerly About Advanced Micro Devices
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To: Zoran who wrote (79910)11/15/1999 9:14:00 PM
From: Paul Engel  Read Replies (2) of 1579462
 
Zoran - re: "What can be measured is the top width, which is a process control nightmare by itself at these gate lengths. The notched gate width brings additional process control factors, like the morphology of polysilicon or in situ doping if amorphous silicon is used,and etch proximity effects"

These are the same problems that have been repeatedly solved as device gate lengths have shrunk from 10 microns to 0.18 microns.

Engineering and development ARE NOT STATIC.

Nothing you described even REMOTELY defines an INHERENT problem that cannot be solved or controlled.

Paul
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