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To: John Finley who wrote (111)	12/10/1999 9:08:00 AM
From: kinkblot	Read Replies (2) of 565

MIJ-NSR Volume 4S1, Symposium on "GaN and Related Alloys", Dec 98 nsr.mij.mrs.org G1.3. Near Defect Free GaN Substrates, by S. Porowski covers some of the issues involved in growing GaN crystals. He's making some progress using the High Pressure Solution Growth (HPSG) method with Mg doping, though his highest quality crystals are still small, ~14 mm maximum dimension. This guy is from the Polish Academy of Sciences, not that there's anything wrong with that. WT

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