Isonics Corp. ISON Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Microcap & Penny Stocks : Isonics Corp. ISON

ISON 0.0001000

0.0%

Nov 4 4:00 PM EST

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

To: Zeev Hed who wrote (906)	12/14/1999 7:25:00 PM
From: Merlin	Read Replies (2) of 1099

I believe that you miss the point in your comparison of Si and GaAs. The ability of silicon to be passivated by a native oxide with excellent dielectric properties is the most significant factor in preventing GaAs from displacing silicon. Although GaAs has a greater carrier mobility, it is much easier to fabricate fine geometries on Si, and Si has better handling properties. It isn't so much the raw material cost as it is the overall processing cost. As far as material cost goes, an AMD Athlon die has an area of 102 square millimeters. Assuming a die thickness on the order of .01", the silicon mass is about 60 milligrams. At $75,000/kg the raw material cost for the Athlon die would be about $4.50. Considering that a high speed Athlon sells for more than $500, I would say that the increased cost of material would be insignificant if the yield on the Athlon is reasonably good. Also, I would think that the silicon in bad devices could be recycled. The question is: How much improvement in overall thermal resistance can be achieved for a packaged device by the use of Si-28 in the die?

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next