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Politics : Formerly About Advanced Micro Devices

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To: Process Boy who wrote (87871)	1/18/2000 10:17:00 AM
From: Bill Jackson	Read Replies (1) of 1574751

PB Monday, Jan 17 2000 7:01PM ET To: Bill Jackson (who wrote) more on the yahoo thread about silicon < Previous \| Next > [ First \| Last \| Msg List ] Reply Notched Gate, someone can help? by: FactFirst 1/17/00 6:46 pm Msg: 97959 of 97963 A few days back I posted a report on Intel?s new tech of Notched Gate that is claimed to help reduce the transistor gate length from 0.13 down to 0.10 micron, increase the drive current by 10%, reduce the operating voltage to 1.2-1.5V, and reduce the current leakage so that the old-aged PIII core has really got a shot of life-saving stimulant and can move over 800+ Mhz at 0.18 micron now. eocenter.com On the other hand, The Register has dug up some dirt on the Cumine for its failed multiple sleeping modes, and Intel has admitted the current leakage problem:"While our manufacturing processes get smaller and smaller (.25 micron to .18 micron ) the widths of the channels between trace lines gets narrower. As a side effect, the current leakage is amplified." See theregister.co.uk But I could not have a response and there are still three things puzzling me: 1. The notched gate tech is claimed to reduce the current leakage problem, but the problem remains. Why? Is it because its advantage of reducing the current leakage is canceled by an increased amount of leakage from 0.13 micron gate to 0.10 gate? 2. Current Cumine core voltage is 1.65V ( intel.com ), more than 0.1V larger than the above operating voltage 1.2-1.5V. Is the operating voltage the same as core voltage? If it is, is the increased voltage supposed to alleviate the leakage problem? 3. The yield of Cumine still needs improvement, does it have something to do with the current leakage problem? Some Techie help. Thanks Bill

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