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Strategies & Market Trends : Gorilla and King Portfolio Candidates
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To: unclewest who wrote (19576)3/9/2000 6:15:00 AM
From: unclewest  Read Replies (1) of 54805
 
for those looking for new SiC products from cree...

the following new information was posted in a series of posts by harvest on the yahoo cree thread last night. harvest is to cree as NYStew is to gmst.

1.)Kanasi Electric of Japan and Cree announced a SiC bipolar pin diode with a new record high breakdown voltage of 6.2KV.The device has a low foward voltage of 4.7 V at 100 A/cm2 and EXCEEDS the practical trade-off limit (blocking voltage and foward voltage)of commerically available Si pin diode for the FIRST TIME.

2.)Ray Pengelly of Cree, "Sic will compete head on with GaAs MESFET technology"
"The intention is to take a portion of the infrastucture market away from MESFETs.Because of the ability of SiC technology to allow a re-think of the thermal characteristics and operating condition of the transistors,it will allow smaller sub-systems to be realized and /or higher case temperature to be achieved."

3.)Cree is leading the way as far as commercialization of SiC devices is concerned.The company announced its first comm. SiC RF power transistor in the middle of '99.

According to Ray Pengelly,Cree general mgr.of Microwave and RF Products,their will be a family of RF and microwave power transistors introduced on a regular schedule during 2000 to complement the 10-watt device that has been introduced to date."The target applications are infrastucture needs above 2 GHz and where appropriate,below 2 GHz" says Pengelly."These include multichannel multipoint distribution systems(MMDS) wireless local loop(WLL),radar,weather control radar,and some medical applications."

4.)Although nitride based devices and IC have yet to reach the commerical market,their time will come.Ray Pengelly states Cree is agressively working on the developement of GaN-based MMIC and that commercialization will happen "in the near future."
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