I might add that the ability to produce devices out of SiC (other than blue LED's) is also discontinuous in that it enables heretofore impossible applications for solid state devices.
fatboy,
you may like this info.
unclewest
cree.....new devices/products
On March 13-14 in Key West, Florida there is a Conference subtitled "A Discussion of the Future Role of Compound Semiconductors in the Global Communications Industry".
Raymond S. Pengelly, General Manager, Microwave and RF Products, Cree is one of the featured speakers. The title of his speech is "Silicon Carbide and Gallium Nitride Circuits for Wireless Communications: Why, What and When".
the following is from the conference link...
Silicon Carbide and Gallium Nitride Circuits for Wireless Communications: Why, What and When
Raymond S. Pengelly
General Manager, Microwave and RF Products
Cree Research
Wide bandgap semiconductor devices and circuits are starting to become a commercial reality as the understanding and manufacture of materials such as silicon carbide (SiC) and gallium nitride (GaN) improve. Near defect free SiC production wafers with diameters up to 3 inches are now commercially available enabling the manufacture of RF and microwave field effect transistors at power levels in excess of 60 watts peak. These SiC devices show high RF power generation per unit area with excellent thermal characteristics enabling the realization of physically small and efficient power amplifiers suitable for operation in infrastructure applications to well over 4 GHz. These bandwidths cover a range of wireless communications applications such as 3G, W-CDMA, MMDS and WLL. In addition such devices exhibit high operating voltages, convenient electrical parameters for broadband communication needs as well as higher potential operating junction temperatures at competitive prices. SiC transistors are also finding applications in L, S and C-band radars and UHF digital television transmitters.
Some examples of Cree Microwave's first SiC transistor products will be shown, opportunities for such technologies in the wireless market-place explained and time-lines for the introduction of new devices described coupled with the impact they will have on systems over the next 5 years or so.
About the Speaker
Raymond S. Pengelly is the General Manager, Microwave and RF Products at Cree, with responsibility for the company's microwave business unit, which includes the recently introduced and planned family of RF power transistor products designed for wireless and broadcast applications. Prior to joining Cree he headed the advanced MMIC product development team at Raytheon RF Components. While at Raytheon, he was responsible for establishment of the central design group for commercial RF and wireless gallium arsenide MMIC products. He received his B.S in Physics and M.S. in Electronics from Southampton University, United Kingdom.
here's the link:
keyconference.com |
