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Technology Stocks : Varian Semiconductor Equipment Associates -- VSEA

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To: Duker who wrote (552)	3/14/2000 11:50:00 AM
From: Proud_Infidel	Read Replies (2) of 1929

Ibis teams with Lawrence Berkeley lab to develop new ion source Semiconductor Business News (03/14/00, 09:30:21 AM EDT) DANVERS, Mass. -- Ibis Technology Corp. here said today that it has entered into a cooperative R&D agreement with the U.S. Department of Energy's Lawrence Berkeley National Laboratory to develop an RF inductively coupled ion source. Under the terms of the agreement, Ka-Ngo Leung of Lawrence Berkeley lab and his staff will develop an ion source suitable for the Ibis 2000 SIMOX-SOI (Separation by IMplantation of OXygen/Silicon-On-Insulator) implanter. This ion source, scheduled to be completed in December, will use the RF inductive coupling technology developed in Leung's laboratory for high-current injection of H+ ions into tokamak reactors for fusion research. "The new ion source will provide a larger extracti n current of O+ ions and reduce the extraction current of other species," said Martin Reid, Ibis' president. "We believe the development will increase wafer throughput by as much as 20% and extend preventive maintenance intervals. The completed ion source will also be simpler in design and less expensive to manufacture than the existing microwave ECR ion source now standard in the SIMOX-SOI industry." Leung is a senior staff scientist and the leader of the Plasma and Ion Source Technology Group in Berkeley Lab's Accelerator and Fusion Research Division. He and his colleagues have had extensive experience in the development of ion sources that can improve the semiconductor manufacturing processes and decrease the cost of flat panel displays. Ibis has been working to commercialize silicon-on-insulator wafers that enable the production of ICs which Ibis believes offer significant advantages over chips fabricated on conventional silicon or epitaxial wafers. These advantages include improved microprocessor speed, reduced power consumption, lower soft error rates and higher temperature operation. Ibis' SIMOX-SOI implantation equipment consists of advanced proprietary hig- current Ibis 1000 oxygen implanters.

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