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Technology Stocks : Kopin Corp. (KOPN)

KOPN 2.325

+2.2%

Nov 24 3:59 PM EST

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To: kinkblot who wrote (941)	3/25/2000 12:01:00 PM
From: kinkblot	Read Replies (2) of 1820

Patent to LETI scientists for improved lift-off method. This method enables IC fabrication by standard thermal processing techniques before lift-off & transfer. In particular, a thin layer with electronic circuits and components can be produced from a monocrystalline silicon wafer (subclaims 2 and 9). U.S. #6,020,252 issued 02/01/00 to Aspar, et al., Method of producing a thin layer of semiconductor material patents.ibm.com Assignee: Commissariat a l'Energie Atomique (LETI) From the background/summary of the invention: This invention has been conceived in order to improve the method described in FR-A-2681472. After a step of ion implantation within a range of appropriate doses and before the separation step, it allows to carry out a thermal treatment of the part of the wafer corresponding to the future thin layer, in particular between 400° C. and 700° C. for silicon, without degrading the surface condition of the flat face of the wafer and without separation of the thin layer. This intermediate thermal treatment can form part of the operations for developing electronic components or can be applied for other reasons. {FR2681472 ---> US5374564} Intéressant, n'est-ce pas? WT

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