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To: Ausdauer who wrote (10114)4/4/2000 4:40:00 PM
From: Binx Bolling  Read Replies (1) of 60323
 
Toshiba Develops 32Mb Read While Write NOR Flash Memory Device; High-Density Component Provides Flexibility, Capacity and Lowers System Costs


April 4, 2000



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IRVINE, Calif.--(BUSINESS WIRE)--April 3, 2000 via NewsEdge Corporation -

Toshiba America Electronic Components, Inc. (TAEC), Monday announced the addition of a 32-megabit (Mb) Read While Write (RWW) NOR flash memory device to the company's growing family of high-density NOR flash memory components.

The TC58FVT/B321 NOR flash memory device is similar in functionality and pin-compatible with Toshiba's TC58FVT/B641 64Mb RWW NOR device announced last month.

Targeted for use in cellular phones, wireless and hand-held consumer devices, and set-top boxes, the TC58FVT/B321 provides the flexibility and capacity required for emerging full-featured applications, such as Internet access and audio/video capabilities.

This device also reduces system-level costs and board area by eliminating the need for an additional EEPROM chip required to store telephone numbers, names and other parameters. Lowering the component count enables lower board, logistics and carrying costs, increases manufacturing output, and enables smaller form-factor systems.

"Read While Write is becoming the architecture of choice for full-featured cellular phone applications," said Kevin Kilbuck, senior business development manager for TAEC's memory business unit. "Toshiba took the 64Mb RWW device and cut it down in order to create a 32Mb NOR in order to provide a fuller-range of design options for our customers."

A RWW NOR flash device is essentially two or more flash memory arrays on a die. One array can be used to store data while code is executed from another array. With this device, Toshiba has enabled greater system design flexibility by using a 9-bank architecture that allows reading from any other bank not in use for writing/reading operations.

The device is organized with one 64 kilobyte (KB) bank, one 448KB bank, and seven 512KB banks. Top and bottom boot block architectures are available with a block size of 8KB x 8.

The 32Mb RWW NOR flash memory device features one of the industry's smallest memory cell sizes, which enables reduction in die size, cost, package size and power consumption. This small memory cell is achieved using Toshiba's shallow trench cell design, 0.20 micron (um) process technology and the company's Scalable by Design(TM) approach.

Like Toshiba's other NOR flash devices, the 32Mb RWW device provides automatic algorithms for programming, block erasure and chip erasure to ensure that data is properly programmed and erased. Additional functions include erase suspend as well as erase resume and block protection to prevent accidental programming or erasure of the protected block.

Toshiba's new high-density TC58FVT/B321 32Mb NOR RWW are encased in 48-pin TSOP Type I packaging. The device operates with a 2.7 volt (V) single power supply, which meets the low-power requirements of portable equipment. In addition, the TC58FVT/B321 offers read access times as fast as 100ns, with faster speed versions planned in the future.

Toshiba's NOR flash memory line also includes a 16Mb device and 64Mb RWW device. Toshiba's NOR flash product line is compatible with AMD/Fujitsu's NOR flash.

As a leading developer of both NAND and NOR flash, Toshiba understands the unique advantages associated with each architecture. By offering both architectures, TAEC is positioned to serve a vast array of growing NOR flash applications requiring higher densities, lower power and faster access times, while continuing as a market leader in NAND flash for use in solid state storage applications.

Pricing and Availability

Samples of Toshiba's TC58FVT/B321 32Mb TSOP device will be available in April, priced at $30 each. Production quantities will be available in Q3'00, and production pricing will be available at that time.

Technical Specifications -0- *T Part Number TC58FVT321 TC58FVB321 Function RWW RWW Design Rule 0.20 um 0.20 um Operating Voltage VCC=2.7 to 3.6V VCC=2.7 to 3.6V Access Time 100 ns 100 ns Package Type 48-pin TSOP Type I 48-pin TSOP Type I Boot Block Top Bottom *T

About Toshiba

Toshiba America Electronic Components (TAEC) is the North American engineering, manufacturing, marketing and sales arm of Toshiba Semiconductor Co. and Display Devices and Components Co. TAEC is recognized as one of the world's largest suppliers of semiconductor, electronic component and storage solutions.

Toshiba's Semiconductor Co. is one of the world's leading manufacturers and suppliers of semiconductor products including LSIs, microprocessors and controllers, and advanced memory products, in addition to discrete and bipolar components.

The company is also responsible for global sales and marketing of other major electronic components including liquid crystal displays, color display and picture tubes, lithium-ion and other secondary batteries. For additional information, visit TAEC's Web site at toshiba.com.

Note: Scalable by Design is a trademark of Toshiba America Electronic Components, Inc.

Editors Note: Reader inquiries publish 800/879-4963, ext. 210.

CONTACT: Toshiba America Electronic Components, Inc. | Lisa Nemec, 949/455-2293 (not for reader inquiries) | E-mail: lisa.nemec@taec.toshiba.com | For reader inquiries: 800/879-4963, ext. 210 | or | Benjamin Group/BSMG Worldwide | Jan Johnson or Suzanne Foxworth, 714/245-7500 | E-mail: jan_johnson@benjamingroup.com or | suzanne_foxworth@benjamingroup.com
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