SOITEC, Silicon-On-Insulator TEChnologies Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : SOITEC, Silicon-On-Insulator TEChnologies

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

To: kinkblot who wrote (2)	5/2/2000 5:01:00 PM
From: kinkblot	Read Replies (2) of 83

US Patent 5,374,564 issued 12/20/94 to Bruel Process for the production of thin semiconductor material films patents.ibm.com This patent was the first in which the general features of the Smart Cut® process were disclosed, and is often cited. The layer is separated thermally: the assembly is raised to a moderate temperature, 400°C to 600°C, which causes fracture along the hydrogen-implanted defect zone. Therefore, this method is not appropriate for applications requiring high temperature processing of devices before separation. By first forming an oxide on the donor wafer and then implanting through it, SOI substrates such as SOITEC's UNIBOND® wafers can be manufactured by this process. WT

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next