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To: kinkblot who wrote (225)	5/11/2000 9:26:00 PM
From: sbaker23	Read Replies (1) of 565

TDI says they do single GaN crystals too--sort of... it seems a typically "Russian Army" approach, though...blow the SiC away after the GaN has grown.. tdii.com Currently, Technologies and Devices International, Inc. in collaboration with Crystal Growth Research Center, (St. Petersburg, Russia) is developing GaN bulk crystal fabrication technique by subsequent hydride vapor phase epitaxy (HVPE) of GaN on SiC substrates and selective removal of the substrate by reactive ion etching (RIE). Free-standing GaN wafers with 0.2-0.3 mm thickness and 30 mm diameter were fabricated...

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