Sematech sees glimmer of optimism in 157-nm lithography developments
By Semiconductor Business News
May 17, 2000 (5:56 AM)
URL: semibiznews.com
AUSTIN, Tex. -- Research managers at International Sematech here said they are more optimistic about the possibility of extending optical lithography to production of ICs below the 0.10-micron technology node after a group of experts reviewed recent developments in key materials for next-generation 157-nm exposure tools. During the consortium's first International Symposium on 157-nm Lithography held in Dana Point, Calif., last week, a half dozen companies reported progress in the development of new photoresist and reticle-protecting pellicle materials for the next generation of optical tools. "Based on the information presented, the confidence level in 157-nm technology rose significantly," said Rich Harbison, the 157-nm program manager at Sematech.
Details about those presentations were not released this week by Sematech, which last year launched an effort to extend the use of optical lithography to 157-nm wavelength systems for production of 90-nm and below feature sizes in circuits. While a number of research groups are working on post-optical technologies for lithography, Sematech and many industry experts believe 157-nm systems could be used in the upcoming 0.10-micron (100-nm) process node in three years.
"The timing of the 157-nm lithography remains a critical issue," said Gerhard Gross, director of lithography at Sematech. "In order to be introduced at the 100-nm node, production tools must be ready by the beginning of 2003. Timing is our biggest concern now. If we cannot have the tools ready by 2003, it will be too late to use 157-nm technology."
But Sematech officials said they saw substantial progress in the information presented at the three-day 157-nm symposium last week. More than 65 presentations were made at the meeting, which was attended by about 300 experts from equipment and materials suppliers, semiconductor manufacturers, laboratories, and universities worldwide.
Results of work done in the development of resist materials and pellicles were seen as the major breakthroughs, said the Austin-based consortium.
"This is the first evidence that we can overcome the high absorbance at 157 nm of most organic materials and existing resists," said Gene Feit, manager of resist development at Sematech. The consortium plans to have resist designed for 157-nm exposure on a Exitech Ltd. microstepper, which was installed at Sematech recently (see Dec. 22, 1999 story).
For pellicles -- a thin membrane material that protects reticles or photomasks from defects -- presentations by several companies indicated that progress had been made in polymer materials and in "hard pellicles." MIT's Lincoln Laboratory now expects to test samples of these polymer materials by the end of May to assess their transmissivity and durability, according to Sematech.
"Last year, a major development in getting momentum going on 157 nm was the identification of a material for the reticle," Harbison said. "The resist and pellicle developments are just as significant and just as important in furthering the momentum of this technology." |
