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To: Ausdauer who wrote (11657)6/1/2000 1:46:00 PM
From: BillyG  Read Replies (1) of 60323
 
What are the thoughts about ferroelectric memory? Is it still too far off?
nikkeibp.asiabiztech.com

Ferroelectric Memory Enters the Mbit Era

Fujitsu Ltd and Matsushita Electronics Corp have independently developed ferroelectric memory cell structures delivering capacities of 1 Mbit or more.
Fujitsu plans to begin sale of volume production chips from December 2000,
and Matsushita Electronics will begin using the new designs in their products at
about the same time. Fujitsu doubled the integration level by switching from the
current 2-transistor, 2-capacitor (2T2C) design to only one of each (1T1C)
for each memory cell. This means that the read signal amplitude is halved, but
the chip delivers stable read performance thanks to reduced variation in
ferroelectric material hysteresis characteristics and in the reference voltage
used in the data judgement reference signal generator. The ferroelectric
material is PZT (PbZrTiO3).

Matsushita Electronics, on the other hand, stacked the transistors and
capacitors to triple the integration level over that of current planar structures.
The stacked structure means that the process temperature must be kept below
700øC to suppress oxidation of the poly-Si plugs linking transistors and
capacitors. Normally ferroelectric material crystallization requires temperatures
of about 800øC, but this was reduced to 650øC through a review of
ferroelectric materials to make it possible to achieve equivalent films at lower
temperatures. The ferroelectric material is SBT (SrBi2Ta2O9).

(June 2000 Issue, Nikkei Electronics Asia)
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