From a link on AMDzone.
fujitsu.co.jp
Fujitsu Introduces Dual-Operation 64Mbit
Flash Memory Products
-- Flexible architecture enables efficient use of memory
sector --
Tokyo, June 12, 2000 --
Fujitsu Limited today
announced that it will
commence sales of two new
flash memory devices
jointly developed with
Advanced Micro Devices
(AMD) of the U.S., The
new 64Mbit flash memory products (MBM29DL640E and
MBM29DD640E) offer dual-operation for simultaneous
performance of read/write/erase functions and FlexBank (TM)
Architecture, which allows flexible allocation of data or programs
to banks.
Demand is increasing for dual operation flash memory products for
cellular telephones and mobile information terminals, where high-
speed processing and more frequent rewriting are required.
In contrast to conventional memory products, which have four
fixed banks for data and programs, the new products feature
FlexBank Architecture - an industry first- that can flexibly allocate
data and programs to banks according to system requirements.
Also, small sector blocks(*1) (8 Kbyte x 8) are available in two
banks to house system start-up programs. Customers are able to
select where to house the start-up program based on thier system
needs, allowing efficient use of all remaining area as memory
space.
Additional features include a Hi-ROM(*2) function to prevent
illegal copying and an accelerator function, which realizes faster
write time.
Fujitsu already offers 4, 8, 16 and 32Mbit dual operation flash
memory products. The company intends to move ahead rapidly
with development of flash memory devices with higher capacity
and reduced power consumption, as well as the flexibility to match
our clients' varied system requirements.
Sample pricing
64Mbit dual operation flash memory: 5,000 yen (TSOP) (*3)
(MBM29DL640E: 3.0V / MBM29DD640E: 2.5V)
Availability
Samples: June 2000
Volume production: September 2000
Sales target
1 million units per month
Specifications
- Process technology: 0.23 micron CMOS process
- Cell structure: two-layer polysilicon structure NOR type memory
cell
- Output: 4Mword x 16bit/ 8Mbyte x 8bit (64Mbit)
- FlexBank Architecture
Bank size
BankA
8Mbit
BankB
24Mbit
BankC
24Mbit
BankD
8Mbit
Security
Hi-ROM function to prevent illegal copies. Hi-ROM area: 256byte
[WP/ACC functions]
WP:
allows protection of outermost 2x8Kbytes
on both of Bank A and Bank D
ACC:
reduces write time when external high voltage is applied
(WP has "upperbar" above the letters)
Interface
Common Flash Memory Interface (CFI)
[Access Time]
[MBM29DL640E]
[MBM29DD640E]
Address
access:
80/90/120 nanosecond
(max.)
100/120 nanosecond (max.)
CE access:
80/90/120 nanosecond
(max.)
100/120 nanosecond (max.)
OE access:
30/35/50 nanosecond
(max.)
35/50 nanosecond (max.)
(CE,OE has "upperbar" above the letters)
Single power operation
MBM29DL640E : 2.7V-3.6V (3.0V-3.6V for 80ns products)
MBM29DD640E : 2.3V-2.5V
Low power consumption
Automatic sleep mode
stand-by mode :
1 micro ampere (standard)
read mode :
18 milli-ampere (max.) word mode
f=5MHz
16 milli-ampere (max.) byte mode
f=5MHz
write/erase mode:
35 milli ampere (max.)
Number of erase/write
operation:
100,000 (min.)
Packaging:
standard 48 pin plastic TSOP package
standard 63 ball/ FBGA(*4) package
Explanation of terminology
*1
small sector blocks - The sector where start-up program
information for CPU is housed
*2
Hi-ROM function - (Hidden Read Only Memory) The sector where
the security code and other specific information is input.
*3
TSOP - (Thin Small Outline Package) A thin type of surface mount
packaging
*4
FBGA (Fine-pitch Ball Grid Array) - A surface mount packaging
with space of less than 1.0mm between ball terminals |
