Dave: Nice summary, altho' from tainted source..
Multiform-DRAM demand is outpacing supply
By Hailey Lynne McKeefry
Electronic Buyers' News
(04/10/00, 12:06:37 PM EST)
eoenabled.com
Not long ago, the DRAM market revolved around "plain vanilla" DRAMs.
Now, however, suppliers are sprinting to keep up with new DRAM technologies,
including double data rate, Rambus, and PC100.
"Users want a choice of DRAMs to better fit their applications. Today,
there are four major architectures, plus specialty and graphics DRAMs," said
Jeff Mailloux, director of DRAM marketing at Micron Technology Inc., Boise,
Idaho. "The biggest challenge in the marketplace is discovering the right
product mix and creating the resources to support it."
Demand for DRAM, as in just about every semiconductor category, exceeds supply.
"Today, the general situation in DRAMs is that every single one of our product lines
is in higher demand than we can comfortably supply," said Cecil Conkle, assistant
vice president of marketing at Mitsubishi Electronics America Inc., Sunnyvale,
Calif. "We expect that supply will tighten for the next couple of years, starting
in the middle of this year."
Lead times remain at several weeks on most categories.
The DRAM market will experience a growth spurt in the next few years, according
to Semico Research Corp. The Phoenix research company is projecting that worldwide
DRAM revenue will rise to $30.56 billion in 2000 from $20.71 billion in 1999,
and will reach $41.89 billion in 2001 and $77.84 billion in 2004.
Average selling prices, which rose late last year, returned to their historical downward
trend, declining 4.2% in the
first quarter, according to a recent survey by the Semiconductor Industry
Association.
"There was a momentary blip, but that was based on the earthquake in Taiwan,"
said John McElroy, vice president of marketing and strategic relations at
Fujitsu Microelectronics Inc., San Jose.
DRAMs
1999 rank Global sales ($ billions)
1998 1999
1. Samsung 3.30 4.77
2. Hyundai 2.09 3.92
3. Micron 1.30 3.33
4. NEC 1.40 2.01
5. Infineon 1.01 1.63
6. Toshiba 0.71 1.49
7. Mitsubishi 1.00 0.88
8. Fujitsu 0.50 0.55
9. Hitachi 0.92 0.50
10. Oki 0.25 0.48
Source: Semico Research Corp.
Directory for top-ranked DRAM suppliers
Fujitsu Microelectronics Inc.
3545 N. First St.
San Jose, Calif. 95134
(408) 922-9000
www.fujitsumicro.com
Developments
Fujitsu has shifted its DRAM focus from PC main memory to more application-specific
memories. "We're trying to address the needs of many current and emerging
applications where the requirements on the memory are different," said John McElroy,
vice president of marketing and strategic relations. "In line with that, we're
talking about faster cycle times, better RA times, and lower power."
In January, the company announced it was sampling its Fast Cycle RAM (FCRAM), a
64-Mbit application-specific memory for graphics and networking, with volume
quantities available in the next few months. The 64-Mbit FCRAM with double-data-rate
(DDR) interface features a 200-MHz clock speed, DLL-controlled output, and a
400-Mbit/s per pin data-transfer rate.
Fujitsu also said it moved forward in packaging with the introduction of its Face-Down
fine-pitch BGA, a low-cost, small-footprint package developed for high-density
and high-speed memory products. The 85-pin device is designed for 128-Mbit DDR SDRAM,
while a 74-pin version enables a transfer rate of 800 MHz for 72-Mbit RDRAM.
Plans
Later this year, Fujitsu will introduce 128- and 256-Mbit versions of its FCRAM for
networking and server applications.
Hitachi Semiconductor (America) Inc.
179 E. Tasman Dr.
San Jose, Calif. 95134
(800) 285-1601
www.hitachi.com/semiconductor
Developments
Last year, Hitachi broke out its DRAM business into a separate virtual company. Since
then, the company has introduced a variety of DRAMs, including many that focus on
the high-end server space. In July, the company introduced 256-Mbit DDR SDRAMs that
it said provide 2.1- Gbyte/s bandwidth when used with a 64-bit bus.
In September, the company produced the industry's first 512-Mbit SDRAM that puts 64
Mbytes into a single package, as well as a 144-Mbit (8-M x 18) Direct Rambus DRAM.
Then in December, the company added 12- and 256-Mbyte DDR DIMMs for workstations, servers, and high-end PCs.
Plans
Hitachi, which moved all its process technology to 0.18 micron last year, will
be shifting to 0.15-micron technology in the next several months. "We're close to
releasing the world's smallest 256-Mbit device," said Ron Bechtold, senior vice
president of the DRAM division.
The company is also working toward finalizing its joint venture with NEC, which
was announced last summer. NEC Hitachi Memory Inc. will pool development and
fabrication resources with an eye toward creating a 0.13-micron synchronous DDR
DRAM by April 2001.
Hyundai Electronics America
Hyundai MicroElectronics Group of Hyundai Electronics Industries
3101 N. First St.
San Jose, Calif. 95134
(408) 232-8000
www.hea.com
Developments
Hyundai MicroElectronics started shipping a number of single and DDR SDRAMs
in the past year. In February, the company started sampling 43-, 166-, and 183-MHz
2-M x 32 DDR SDRAM for graphics, networking, and consumer applications. Last
November, the company announced the availability of 2-M x 32 200-MHz SDRAMs, which
are fabricated on a 0.22-micron process optimized for 3.3-V operation. In August,
the company started sampling its 128-Mbit DDR SDRAMs.
Plans
Hyundai MicroElectronics said it will continue to ramp production of its DDR
SDRAMs throughout the rest of this year. For example, the 2-M x 32 DDR SDRAM is
scheduled for volume production in this year's second quarter.
Infineon Technologies Corp.
1730 N. First St.
San Jose, Calif. 95112
(888) 463-4636, (408) 501-6000
www.infineon.com
Developments
1999 was a growth year, according to Infineon, with bit output increasing by 200%.
The company credits this to its efforts to add fab capacity. In the previous
year, Infineon ramped production in three fabs: its White Oak Semiconductor fab in
Richmond, Va., a joint venture between Infineon Technologies AG and Motorola
Semiconductor Products Sector; its plant in Dresden, Germany; and the ProMOS
Technologies Inc. plant in Taiwan, a joint venture with Mosel-Vitelic.
Infineon also improved its process technology. "We moved all those fabs relatively
early last year to technologies 0.2 micron or under," said Hans-Petr Bette, vice
president of business projects. "Because of leading-edge technology, we have been
able not only to increase our overall capacity but increase the number of dies per
wafer dramatically, which will lead to bit growth of 200%."
Infineon claims it has also been moving aggressively into the 256-Mbit arena, with
products aimed at high-end PCs and servers. The company said it has produced more
than a million of the devices at its Dresden plant.
Plans
Due to the limitations imposed by an initial public offering in March,
Infineon was unable to comment on its plans.
Micron Technology Inc.
8000 S. Federal Way
P.O. Box 6
Boise, Idaho 83707
(208) 368-4400
www.micron.com
Developments
Much of Micron's attention this past year was involved with integrating Texas Instruments'
memory division into its own business. Late in 1998, Micron acquired TI's memory business,
including TI's wholly owned fabs in Avezzano, Italy, and Richardson, Texas; its
joint-venture interests in Japan and Singapore; and an assembly and test
operation in Singapore.
The company said it's also continuing its process-technology improvements,
advancing to an 0.18-micron process and doing R&D to move to 0.15 micron.
Micron also introduced a number of DDR SDRAM products in the last year, including
2.5-V, 100- and 133-MHz, 128-Mbit devices, and a 2.5-V, 133-MHz, 64-Mbit product. The
company said it also started sampling 356- and 400-MHz, 128- and 144-Mbit RDRAM components
and 64-, 96-, and 128-Mbyte Rambus in-line memory modules.
Plans
In the coming year, Micron said it will continue to look for ways to reduce costs
to stay competitive. The company will move its product line to concentrate on
128-Mbit DDR and Rambus DRAMs.
Mitsubishi Electronics America Inc.
Electronic Device Group
1050 E. Arques Ave.
Sunnyvale, Calif. 94086
(408) 730-5900
www.mitsubishichips.com
Developments
This year, Mitsubishi's Electronic Device Group said it is concentrating on getting
out the newest technology available. In January, the company started sampling a
512-Mbyte registered DIMM that complies with JEDEC. The devices meet PC266 and PC200
requirements, and are targeted at high-end servers, workstations, and PCs,
according to the company.
Last November, the company announced the availability of 256-Mbit PC266 DDR and
PC133 conventional SDRAMs manufactured in a 0.18-micron CMOS process technology.
The company also entered into a strategic partnership with Vanguard International
Semiconductor Corp. (VIS) and Powerchip Semiconductor Corp. (PSC). "We've already
announced that with all the financial challenges of DRAMs for the last few years,
our growth will be somewhat limited within our own factories," said Cecil Conkle,
assistant vice president of marketing. "We're instead concentrating more
on outsourcing expansions."
In June, Mitsubishi announced an agreement in which Mitsubishi Electric
will transfer DRAM-manufacturing technology to VIS and PSC. The company said it
will provide its partners with 0.20- and 0.18-micron DRAM-production process technologies.
Plans
Mitsubishi will concentrate on moving its production processes to 0.18
micron in the coming months and to 0.15 micron next year. New products will be
aimed at DDR, Rambus, and PC133 devices.
NEC Electronics Inc.
2880 Scott Blvd.
Santa Clara, Calif. 95050
(408) 588-6000, (800) 366-9782
www.necel.com
Developments
NEC said it's heavily committed to SDRAMs, which take up the lion's share of its
production. To improve quality and cost on these products, NEC said it's aggressively
introducing die shrinks for its 128-Mbit SDRAMs. A 0.20-micron version is being
sampled, and the company claims it will start sampling a 0.18-micron version in the
next two to three months. NEC also began producing 128-Mbit DDR DRAMs.
Plans
This summer, NEC will begin to transition its 64-Mbit synchronous products to
higher densities, focusing on 128-Mbit DDR, SDRAM, and Rambus, according to the
company. By the end of the year, NEC said it will ship even higher-density DRAMs,
including 256- and 288-Mbit devices. In 2002, NEC said it will open a G-Line dedicated
to gigabit-level technologies at its fab in Roseville, Calif.
Oki Semiconductor
785 N. Mary Ave.
Sunnyvale, Calif. 94086
(408) 720-1900
www.okisemi.com
Developments
Oki has reaffirmed its long-standing heritage as a communications supplier,
and is best known for its 10-Gbit/s optical components and devices, according to a spokesman.
Oki has phased out commodity DRAMs, and its memory business is now centered on
application-specific memories for datacom and telecom systems applications.
Plans
Continuing to expand its communications offerings, Oki will promote its high-speed
optical products, network and telecom ICs, and system-on-a-chip development platform.
Samsung Semiconductor Inc.
3655 N. First St.
San Jose, Calif. 95134-1713
(408) 544-4124
www.samsungsemi.com
Developments
Samsung has broadened its offerings in the past year to include Rambus, PC133, and
DDR devices. "We've been preparing for two years to have a product mix that's no longer
homogenous," said Bob Eminian, vice president of marketing and e-business. "We're the
only company around that's in mass production on PC100, DDR, and Rambus SDRAMs."
In addition to shipping a 133-MHz SDRAM in the summer, the company started offering
128-Mbit Rambus and DDR products in the fourth quarter. Earlier this year,
Samsung began sampling 288-Mbit Rambus parts.
Samsung moved its DRAM lines to 0.18- and 0.17-micron processes. The transition
to a 0.15-micron process is under way; the company broke ground on a new factory
in Korea earlier this year.
Plans
Samsung will fine-tune its move into multiple markets. "This will be a
year to master manufacturing, get cost down, and bring new products in," said Eminian,
adding that the company will add 200- to 333-MHz DDR SDRAMs to its portfolio, and ramp
production on PC133 and
Rambus devices.
Toshiba America Electronic Components Inc.
9775 Toledo Way
Irvine, Calif. 92618-1811
(949) 455-2000
www.toshiba.com/taec
Developments
This year, Toshiba continued focusing on new technology. "Our strategy
for quite a while has been to focus on leading-edge products," said Jim Eldridge,
business-development engineer
for Toshiba's DRAM products.
Toshiba introduced high-performance 128-Mbit devices across its entire product line
including DDR, Rambus, and synchronous, and is pushing its process technology. "We're
100% at 0.2 micron and pushing toward 0.175 micron," Eldridge said. In February,
the company announced samples of a new 256-Mbit SDRAM to be created on the new process.
Toshiba also introduced an architecture for its 288-Mbit Rambus DRAM that is being
produced in sample quantities on the new line.
Plans
Toshiba will add 256-Mbit devices to all lines and begin mass production on its
288-Mbit RDRAMs. |
