For embedded nonvolatile memory applications, the ability to scale is a strength for SSTI, not a encumbrance. SSTI recently (around May 2000) developed and patented a new process technology which leads to a 40 percent reduction in the size of the SuperFlash® cell. This self-alignment process for its patented SuperFlash® memory cell basically eliminates the need for built-in tolerances. This technology was jointly developed with IBM. Remember, since 1998 IBM has licensed SST's SuperFlash® technology.
Due to its scalability, low power consumption and lower cost structure, the self-aligned SuperFlash® cell is expected to strengthen SSTI's position in the wireless communications market. SSTI expects a very fast migration path to cutting-edge process geometries of 0.13µ and below. Shipments of the 0.18µ self-aligned SuperFlash® cell are expected early next year.
SSTI has currently licensed SuperFlash® to SANYO Electric Co., Ltd., IBM, Motorola, National Semiconductor, Samsung Electronics Co. Ltd., SANYO Electric Co., Ltd., Seiko Epson Corp.,TSMC-Acer Semiconductor Manufacturing Co. (TASMC) and TSMC.
Good luck
Eric |
