Hi Jozef Halada; Samsung on RDRAM @ PlatformConference...
In Samsung's ho hum presentation on RDRAM, some interesting facts emerge:
inqst.com
We've been telling people that with the current FSB speeds, high bandwidth memory doesn't do any good, and here is Samsung saying the same thing:
PC Performance is limited by FSB, AGP, I/O...Not DRAM
(ex: CL=2 vs. 3, PC66 vs. PC100 vs. PC133..)
CPU/Chipset/FSB is the First Key
for PC Performance, Not by DRAM Speed! (page 14)
A fascinating chart showing the bin split for 2nd Generation A-die, 128./144Mb is on page 18. It shows that Samsung is now getting about 50% of die to run to PC800 speeds.
They show a chart indicating increasing RDRAM speeds in the future. The next bin is going to be 1.066GHz (currently 800MHz), and should get here around the end of the year for "short channel" devices, and in late 2001 for "long channel" (i.e. RIMM) devices. By 2003, they are hoping for 1600MHz. (page 24)
They show the layer count for RIMMs dropping from the original 8 layers in 2000 to 6 layers in 2001, and then remaining steady. (page 26)
Samsung also has a presentation on the future of DDR, which I shall read and comment upon when they post it. (Should be soon.)
-- Carl
P.S. Re BMs, I would guess that DDR will provide some small advantage, perhaps better regularity. Of course with things like this, time is generally the solution. |
