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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 213.94-0.4%10:38 AM EST
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To: Charles R who wrote (2612)7/28/2000 3:15:16 AM
From: Hans de VriesRead Replies (1) of 275872
 
Chuck,

"The gate is put on top in the usual way but the Drain and the Source are placed on the vertical
sides of the block! The open spaces between the blocks are used for the isolation between
the transistors. They are filled with an isolator."

Isolation between transistors becomes more and more important if you put them closer together.
In the last few years there has been a transition to Shallow Trench isolation where trenches are etched between
transistors and filled with an isolator. This method allowed up to 40% more gates per square mm.
AMD now goes a step further. It uses the side walls of the trenches for the Source and Drain of the transistor.
This may lead again to a significant improvement in gates per square mm. (besides many other advantages)

Regards, Hans
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