Great reply Mike. My cat's been doing the same thing as well. Only exception is that she attacks my legs when I walk by. I think there are some pent up hostility issues she may be trying to work through. If my ankles survive we both should be fine. Oh yes... CREE... my money (literally) is on them to 'survive' this as well.
Nice article this morning.. Sorry I can't provide the link.
40 Watt Hybrid Amplifier and First Reported GaN MMIC Exceed
Highest Available Power from GaAs
DURHAM, N.C., Aug. 15 /PRNewswire/ -- At the Biennial IEEE Cornell
University Conference on Advanced Concepts in High Performance Devices held in
Ithaca, New York last week, Cree, Inc., (Nasdaq: CREE) announced that it has
demonstrated a record setting 10 GHz radio frequency (RF) power performance
from a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). The
GaN HEMT transistor was incorporated into a hybrid amplifier that achieved
40 Watts of pulsed RF output power at 10 GHz. This is greater than 2.5 times
higher than has been publicly reported for a single semiconductor device at
this frequency.
In other development news, Cree reported it has demonstrated the first
Monolithic Microwave Integrated Circuit (MMIC) in GaN, grown on a semi-
insulating SiC substrate. A MMIC places the RF matching circuitry of the
amplifier directly on the chip, allowing for more efficient, broader band,
performance than for the hybrid amplifiers discussed above. In the first
iteration, the GaN MMIC achieved 20 Watts of pulsed RF output power at 9 GHz,
well exceeding the highest RF output power gallium arsenide (GaAs) MMICs
available for this frequency range.
John Palmour, Cree's Director of Advanced Devices commented, "We are
extremely pleased with the pace of development in GaN microwave technology.
The 40 Watt hybrid amplifier demonstrates the vast improvement in power
performance over GaAs, yielded by placing the GaN device on our high thermal
conductivity semi-insulating SiC substrates. We believe the first
demonstration of a GaN MMIC heralds a new era of high performance wide bandgap
MMIC-based amplifiers that are expected to outperform other semiconductor
technologies for power and bandwidth."
The work on GaN hybrid and MMIC amplifiers was funded at Cree, in part, by
the Air Force Research Laboratories and the Office of Naval Research,
respectively. GaN discrete devices and MMICs which are under development are
being targeted at Cree for high frequency (5-35 GHz) commercial broadband
communications, as well as military radar and communications applications.
North Carolina-based Cree, Inc. is the world leader in developing and
manufacturing semiconductor materials and electronic devices made from silicon
carbide. The company uses proprietary technology to make enabling compound
semiconductors such as blue and green LEDs, microwave transistors for use in
wireless base stations and radar, SiC crystals used in the production of
unique gemstones and SiC wafers that are sold for research. Cree has new
product initiatives based on its experience in SiC, including blue laser
diodes for optical storage applications and high power devices for power
conditioning and switching. For more information on Cree, visit
cree.com. |
