Samsung readying 288-Mbit Rambus DRAM for fall volume launch
By Jack Robertson, Electronic Buyers' News
Aug 23, 2000 (7:42 AM)
URL: ebnews.com
Samsung Semiconductor Inc., exhibiting at the Intel Developers Forum this week in San Jose, said first samples of its 288-Mbit Direct Rambus DRAM are available with production shipments to start in the fall. The U.S. subsidiary of Samsung Electronics Co. Ltd. said the new higher density chips can be mounted double-sided in a module, offering 288-Mbyte or 576-Mbyte RIMMs. Thus, a single-channel Rambus memory would have a 1-Gbyte capacity and a two-channel memory 2 Gbytes.
Bob Eminian, vice president of marketing for Samsung Semiconductor, said he expected Direct RDRAM to comprise about 15% of total DRAM unit shipments next year, with more than 250 million devices shipped.
Samsung is also maintaining a strong position in PC133 SDRAMs and double-data-rate (DDR) SDRAMs. Eminian estimated DDR will also ramp up in 2001 to about 15% of the total DRAM market.
Additionally, Samsung showed a 300-mm-wafer at IDF containing 256-Mbit SDRAM die, which could be composed of either single- or double-data-rate chips.
Eminian said Samsung, the only major supplier so far of Direct RDRAMs to the PC market, has not lowered its prices, but has kept them stable. |
