NSCT Message Board - Msg: 14493584

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Technology Stocks : NSCT

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To: Rob S. who wrote (97)	10/2/2000 10:56:17 AM
From: David Harker	Read Replies (1) of 113

>I discovered one positive develop: the company said it >was able to reduce process steps for the memory cell >from three to two additional steps. Actually, it went from two down to one additional step. It was never higher than two additional steps. national-scientific.com Click on 'Data sheets (.pdf)' then 'Tunnel Mos'. Look at page 9 of that pdf - it says "1 extra mask steps" (note they goofed and left the plural word "steps" vs. the correct singular "1 extra mask step"). They also goofed and list it still as two steps in the overview of the Tunnel Mos memory - click on "TunnelMOS Memory" under "Product Data" to see that. I agree regarding the importance of this improvement, though am not a HW expert. See the Raging Bull moderated board on NSCT for a much higher volume of discussion of NSCT: ragingbull.altavista.com

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