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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 203.14-0.8%Jan 9 9:30 AM EST
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To: Daniel Schuh who wrote (21679)12/6/2000 2:23:17 PM
From: Pravin KamdarRead Replies (2) of 275872
 
Nitox, Dan,

An epitaxial layer is a single crystalline layer that is grown on top of a single crystalline substrate. Whether the layer is grown using vapor-phase, liquid-phase, or molecular beam epitaxy techniques, the deposited atoms follow the template of the underlying crystal (epitaxy, from the Greek words epi, meaning "on", and taxis, meaning "arrangement").

You might ask how this relates to SOI and Si28. Since SOI wafers have an insulating layer under the Silicon epi layer, the silicon epi layer can not be grown vertically in a single crystalline manner. Instead, polycrystalline silicon is deposited over the insulating surface. But there are regions where the single crystalline silicon of the underlying substrate extends through the insulating layer to make contact with the deposited poly. These regions provide the single crystalline seed from which the rest of the layer is recrystalized under a horizontally scanning annealing process (heat lamp or electron beam). I see no reason why the SOI epi layer can not be made with Si28. The bulk Si28 would just have to be shipped to the makers of the compounds used in the epi process (such as SiCl4) and substituted for the isotopically impure silicon that they are using now. AMD would then just use these updated compounds to make their SOI wafers in their Dresden expansion, without have to change any processing steps -- and yielding the advantage of Si28.

Pravin.
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