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Technology Stocks : Vitesse Semiconductor
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To: Mark Willis who wrote (658)5/30/1997 12:11:00 PM
From: Marie Meyer   of 4710
 
Mark: Re HBTs, you asked:

"Marie, could you comment on the characteristics of both VTSS's Submicron High Integration GaAs Technology or H-GaAs(TM) process versus the GaAs Hetero Junction Bipolar Transistor or HBT process of TRW's. It appears that RFMD relies upon TRW's process and wafers do produce some of their product. "

I'll have to defer to one of the engineers that post on this board for a detailed discussion of the pros and cons of MESFETs vs HBTs. In a nutshell, MESFETs are less expensive to make and easier to do large scale integrations (10,000 or 100,000 or even 1 million transistors on a single chip), which is very important for the digital market that VTSS is pursuing. HBTs offer higher performance, but you pay a price in terms of cost and maturity of process.

But, in a nutshell, don't worry about RFMD as competition for VTSS, becasue they are going to pursue the analog/wireless market that ANAD and most of TQNT are active in. For now, they are not potential competition for VTSS.
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