SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Applied Materials
AMAT 266.31+3.7%12:50 PM EST

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: John Trader who wrote (41241)1/3/2001 9:56:34 AM
From: Proud_Infidel  Read Replies (1) of 70976
 
Samsung Mass Produces 0.17micron DRAMs

Samsung Electronics is to mass produce third-generation Rambus dynamic random access memory (RDRAM) chips. These RDRAMs utilize 0.17micron design rule, where circuits are about 1/600th the size of a human hair.

The third-generation RDRAMs being mass-produced by Samsung will be available in 128Mb, 144Mb and 288Mb memory capacities. Four 288MB modules (each module consisting of sixteen chips) installed in a single system can support up to 2GB of memory.

Application of the third-generation 0.17micron design rule means that 25% more chips can be made per wafer than was possible with second-generation technology. The improved efficiency will reduce the high production costs that have hindered the mass utilization of RDRAMs.

At the same time, Samsung's next-generation mass-production technology reduces the chip size and shortens the chip's internal signal processing time. Therefore, operation speed is improved by over 30% and these DRAMs are now capable of reaching speeds of 1,066MHz, the fastest of any memory chip currently available.

(January 2001 Issue, Nikkei Electronics Asia)

Subject 50522
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext