Voop,
re: KOPN - Say What?
Yo da local Kopin Maiven.
Can you evaluate the significance of this in sort of laymans language?
>> Kopin Announces New HBTs for Advanced Wireless Handsets InGaP/GaInAsN Transistors Offer Enhanced RF Circuit Design and Performance
Business Wire
Jan. 18, 2001
Kopin Corporation (NASDAQ: KOPN), the leading provider of gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) for wireless and fiber-optic telecom applications, announced today the introduction of InGaP/GaInAsN HBTs. These novel structures significantly enhance the performance of HBT transistors within the existing GaAs manufacturing platform.
"GaAs-based HBTs traditionally have been the transistors of choice for power amplifiers in digital handsets. We are delighted to announce our success in incorporating indium and nitrogen into the base layers of our HBTs," said Dr. John C.C. Fan, Kopin's president and chief executive officer. "We have achieved substantial reductions in turn-on voltage of more than 150 mV with these InGaP/GaInAsN structures, while retaining excellent device characteristics. This major technical advance should enable significant improvements in GaAs-based HBT power amplifiers for advanced wireless handsets by lowering the operating voltage, increasing the efficiency and reducing power consumption."
"We have successfully grown InGaP/GaInAsN HBT structures in our current high-volume organo-metallic chemical vapor deposition (OMCVD) production systems using a proprietary and patent-pending process. The reduction in turn-on voltage enabled by GaInAsN base layers should permit better management of the voltage budget for the design of both wired and wireless GaAs-based RF circuits. Additional benefits of the InGaP/GaInAsN HBT structure include stable temperature characteristics, enhanced RF circuit performance, and improved device reliability," stated Dr. Roger E. Welser, Director of Transistor Technology.
"Reducing the emitter/base turn-on voltage is a key requirement for maintaining the performance advantage of GaAs-based HBTs in the next-generation electronic components," commented Dr. M. Frank Chang, professor of electrical engineering at the University of California, Los Angeles, director of the High Speed Electronics Laboratory, and IEEE Fellow. "The results reported here represent a significant milestone, and further development along this direction will open new avenues for GaAs-based RF circuit design that would fit well with lower supply voltages in wireless handsets."
"The combination of our dominant commercial GaAs-based HBT position, our recent announcement of InP-based HBTs, and these new GaInAsN HBTs should allow our customers and partners a wide range of HBTs, both for ultra-high speed fiber optics networks and advanced wireless handsets. Our partners are beginning to sample our InGaP/GaInAsN HBTs," concluded Dr. Fan. <<
- Eric - |
