Cree press release from March 27...on to Europe for UltraRF.
FOR IMMEDIATE RELEASE
Contact:
Fran Barsky
Investor Relations Manager
Cree, Inc.
(T) 919-313-5397
(F) 919-313-5452
email: fran_barsky@cree.com
Castle Microwave Opens Design Center to Promote
UltraRF Products in Europe
Castle Microwave Receives ISO 9001 Certification
to Support UltraRF’s Products
Sunnyvale, CA, March 27, 2001 - UltraRF, Inc., a wholly owned subsidiary of Cree, Inc. (Nasdaq: CREE), and a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, today announced that its representative organization in the United Kingdom and Ireland, has established an application engineering design center in Twyford, England. The new center is centrally located for UltraRF's strategic customer base.
Designed to benefit European customers, the technology-centric engineering lab and design center will be equipped to make complex RF measurements on the entire range of UltraRF bipolar and LDMOS RF power transistors and modules. In addition, the center will host customer engineering visits to enable UltraRF customers to make intricate RF measures in the facility via utilization of the sophisticated engineering laboratory. Corresponding with the establishment of the design center, Castle Microwave has been awarded ISO 9001 certification to support UltraRF in the verification of the design, prototype and pre-production facilities being implemented.
"Our real-time testing capability for our European customers further demonstrates our commitment to furnish our customers with real-time engineering support in their time zone," stated John Quinn, UltraRF vice president.
UltraRF designs, manufacturers and markets a complete line of high-quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular infrastructure systems. Renowned for world class bipolar and LDMOS products, UltraRF has added silicon carbide (SiC) advanced technology transistors to address the demand for the next generation of wire infrastructure RF power amplifiers.
UltraRF operates a technologically advanced fabrication facility. The company designs and manufactures LDMOS and bipolar semiconductors for operation as high as 2.4 GHz. UltraRF's principal offices are at 160 Gibraltar Court, Sunnyvale, California 94089. For more information please visit UltraRF's website at www.ultrarf.com or call 408-745-5700.
UltraRF, Inc., is a wholly-owned subsidiary of Cree, Inc., which develops and manufactures semiconductor materials and devices based on SiC, gallium nitride (GaN) and related compounds. The company's products include blue and green light emitting diodes (LEDs), RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development. Cree has new product initiatives based on its experience in SiC and GaN-based semiconductors, including blue laser diodes for optical storage applications, high frequency microwave devices for radar and other communication systems, and power devices for power conditioning and switching. For more information on Cree, visit www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ due to a number of factors, including the risk we may encounter delays or difficulties in bringing equipment on line in the center, potential lack of customer acceptance of the center, the risk that the center might not be able to meet the demand for its services and other factors discussed in Cree's filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 25, 2000 and subsequent quarterly reports. |
