Very good news indeed. Product development keeps on truckin
DURHAM, N.C., April 16 /PRNewswire/ -- Cree, Inc. (Nasdaq: CREE) today
introduced a new 3-inch diameter, n-type, 4H silicon carbide (SiC) wafer
available for immediate sale. This new product offering complements Cree's
previously released 3-inch diameter, n-type, 6H SiC material, introduced in
October 1999 to meet the needs of high volume optoelectronics customers.
Cree also announced today the demonstration of a 3-inch diameter semi-
insulating 4H SiC substrate. Larger semi-insulating SiC substrates will allow
for cost-effective scaling of RF and microwave products for commercial
production.
Cree is the world's only known manufacturer with commercially available
single crystal 3-inch SiC substrates. Three-inch wafers more than double the
available device area per wafer over existing 2-inch technology, and are
expected to significantly reduce the cost of devices made from SiC.
Dr. Robert Glass, Cree Materials Business VP and General Manager,
commented, "The addition of n-type 4H to our 3-inch product family and the
demonstration of 3-inch semi-insulating wafer capability results from Cree's
commitment to converting world class research into products which respond to
the needs of the commercial market."
North Carolina-based Cree, Inc. develops and manufactures semiconductor
materials and devices based on silicon carbide (SiC), gallium nitride (GaN)
and related compounds. The company's products include blue and green LEDs, RF
power transistors for use in wireless infrastructure applications, SiC
crystals used in the production of unique gemstones and SiC wafers sold for
use in research and development. Cree has new product initiatives based on
its experience in SiC and GaN-based semiconductors, including blue laser
diodes for optical storage applications, high frequency microwave devices for
radar and other communications systems, and power devices for power
conditioning and switching. For more information on Cree, visit
cree.com. |
