PHOENIX-(BW)-5/22/01-UltraRF Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, is showcasing its family of RF power transistors here at Microwave Theory and Techniques Society's Microwave Symposium (MTT-S) 2001 at booth 3133.
UltraRF offers a full line of bipolar and LDMOS devices, all of which are offered in industry standard packages and operate at power levels ranging from 10 watts to more than 1,000 watts.
Featured products include:
-- UPF21090 - The UPF21090 transistor operates at 28V with a broad band RF output rating of 90 watts. It is specifically designed for UMTS base station applications in the 2.1 GHz band and is ideal for high-power wideband CDMA RF power amplifiers in Class A or Class AB operation.
-- UPF18060 - The UPF18060 has a frequency band of 1.805 GHz to 1.880 GHz and is rated for a minimum output of 60 watts. The UPF18060 can be dropped into existing power amplifier designs with no matching changes required, making it easy to insert into existing base stations.
-- UPF21060 - The UPF21060 is designed for UMTS base station applications in the frequency band 2.1 GHz to 2.2 GHz and is ideal for W-CDMA, CDMA, GSM and multicarrier power amplifiers (MCPA). Its output power is 60 watts, and it is manufactured in an industry standard package for quick and easy replacement.
-- UPF19060 - The UPF19060 power transistor is designed to operate as a Class A or Class AB high-power linear amplifier in PCS and GSM base station applications, operating in the 1930 MHz to 1990 MHz band. It operates at 26V with an RF output rating of 60 watts.
UltraRF designs, manufactures and markets a complete line of high-quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular infrastructure systems.
Renowned for world-class bipolar and LDMOS products, UltraRF has added silicon carbide advanced technology transistors to address the demand for the next generation of wireless infrastructure RF power amplifiers.
UltraRF operates a technologically advanced fabrication facility. The company designs and manufactures LDMOS and bipolar power semiconductors for operation as high as 2.4 GHz. UltraRF's principal offices are at 160 Gibraltar Court, Sunnyvale, Calif. 94089. For more information, please visit the UltraRF Web site at www.ultrarf.com or call 408/745-5700.
UltraRF Inc. is a wholly owned subsidiary of Cree Inc., which develops and manufactures semiconductor materials and devices based on SiC, GaN and related compounds. The company's products include blue and green LEDs, RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development.
Cree has new product initiatives based on its experience in SiC- and GaN-based semiconductors, including blue laser diodes for optical storage applications, high-frequency microwave devices for radar and other communication systems and power devices for power conditioning and switching. For more information on Cree, visit www.cree.com.
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I believe CREE buys equipment from Emcore.
EMCORE designs, develops and manufactures compound semiconductor wafers and devices and is a leading developer and manufacturer of the tools and manufacturing processes used to fabricate compound semiconductor wafers and devices. Its products and technology enable customers, both in the United States and internationally, to manufacture commercial volumes of high-performance electronic devices using compound semiconductors. EMCORE's products are used in a wide variety of applications in the communications (satellite, data, telecommunications and wireless), consumer and automotive electronics, computers and peripherals, and lighting markets. EMCORE is incorporated in the State of New Jersey and its principal executive offices are located in Somerset, New Jersey.
Jim |
