Varian Semiconductor Awarded Patent that Enables Simplified Semiconductor Manufacturing
Post-Gate Ion Implantation Process and VIISta Platform Eliminate up to Four Mask Levels
GLOUCESTER, Mass.--(BUSINESS WIRE)--May 23, 2001-- Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - news), a leading supplier of ion implantation systems, today announced that U.S. Patent Number 6,187,643 for a simplified semiconductor device manufacturing using low energy high tilt angle and high energy post gate ion implantation (PoGI) was recently assigned to Varian Semiconductor.
The Post-Gate Ion Implantation (PoGI) approach has the potential to reduce integrated circuit manufacturing costs by eliminating up to four of the masking levels required for device production. These cost savings advantages are made possible through the unique high tilt capability of Varian Semiconductor's single wafer VIISta platform of ion implanters. All VIISta systems can routinely achieve high tilt implants of up to 60 degrees in both the horizontal and vertical directions, which far exceeds the 10 degree implant angle limitations of spinning disk systems.
Alan Sheng, Ph.D., Varian Semiconductor's vice president of engineering, commented, ``The PoGI process is one example of our continuing research and development efforts to create significant production advantages for our customers using the parallel beam capabilities of the VIISta platform. For high energy implants, we already offer our customers improved device isolation with tighter n+ to p+ spacing and additional mask count reduction opportunities with uniform through-gate implantation. Varian Semiconductor continues to be focused on providing our customers with leading technology products. Our research and development efforts are focused on both the ion implant system and the processes to utilize the capabilities of our implanters in production.''
John Borland, a senior scientist at Varian Semiconductor and the inventor stated, ``The PoGI process moves all the pre-gate implantation steps to post-gate stack formation. The VIISta 810 medium current or VIISta 3000 high energy ion implanters coupled with the VIISta 80 high current system are utilized for through-gate implant (TGI) and through-spacer implant (TSI) manufacturing steps. This process eliminates two nMOS and two pMOS masking levels.'' Commenting further, Borland added, ``The precise physical placement of the dopant ions provided by the highly parallel beam, single wafer systems has the potential to produce more uniform device parametrics across the wafer.'' Precise physical placement of dopants both vertically and laterally around the MOS gate stack structures can improve device performance.
About Varian Semiconductor:
Varian Semiconductor Equipment Associates is a leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in our web site is not incorporated by reference into this release, and our web site address is included in this release as an inactive textual reference only.
Note: This press release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the company's operating outlook, market share and technology leadership are forward-looking statements. There are a number of important factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change and the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release. |
