Hi tinkershaw; Re your engineering booboos:
You wrote: "Yes, but that is because dual channel DDR requires 132 line traces plus control and addressing traces to function. DDR2100 had trouble with just the 66 line traces. Far too much EMI. RDRAM can do dual channels because it only taks 66 total line traces, of which only 60 are high speed."
Actually, RDRAM has far worse EMI problems. The reason is simple, they're at much higher speeds. That's why RDRAM traces have to be provided with ground traces between the signal traces, and you forgot to list the ground traces in your trace count. Total center to center distance between two RSL (i.e. high speed RDRAM) traces is 40 mils, while the center to center distance between two SDRAM or DDR data traces is only 12 mils. See #reply-13853059 for links.
In other words, RDRAM takes data at 3x the speed of DDR, but using traces that are 3.33x as wide. Now do you get it?
The basic, underlying fact that you cannot deny is that AMD still isn't bothering with an RDRAM chipset, but Intel, along with all the independent chipset makers, saw fit to provide the P4 with DDR. Are you really so convinced that you understand engineering better than all those engineers who chose DDR? BWAHAHAHAHA!!! You're a lawyer and you couldn't even figure out what was going to happen in the legal side of this fiasco, now you're making statements about the engineering?
The engineering questions have, for better than 2 years, already been debated at length on this thread. You're not a heavy hitter in this area. You're not even a light hitter. Stick to the legal stuff, that's where Rambus still has some sort of a chance.
-- Carl |
