Atmel Offers 45-GHz SiGe BiCMOS Process and Design Kit for System-On-Chip Solutions
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SAN JOSE, Calif.--(BUSINESS WIRE)--July 17, 2001--Atmel® Corporation (Nasdaq:ATML), announced today the availability of an advanced Silicon-Germanium (SiGe) BiCMOS process technology, AT46000. This technology has been developed for use in telecommunications and high-speed data applications up to 12 GHz. The process offers designers bipolar speeds of 45 GHz, 3.3 volt CMOS with a 5.0 volt I/O option, and a complete digital standard cell library. The AT46000 process is the first of several SiGe BiCMOS processes offered in the Atmel SiGe BiCMOS roadmap.
This process technology provides many optional devices for application specific product designs in addition to the CMOS and bipolar transistor suite. The AT46000 process includes low-noise isolated NMOS transistors, multiple capacitors (poly-plate and MIM (Q=80@2Ghz), multiple resistor types (nwell, P+/N+, S/D, poly), diodes, varactors, and inductors.
A Cadence® design kit is available for designers who want to use the AT46000 process. The design kit supports accurate mixed signal simulation between digital, analog and RF circuits. New designs can be evaluated with either a full engineering run or with a portion of a multi-project wafer run. Use of shared multi-project wafers can significantly reduce new product development costs.
``We are a high-volume producer of both mixed-signal and wireless semiconductors and now we can offer our customers an enabling SiGe BiCMOS process for developing their system-on-a-chip solutions. Using our design kit we currently have multiple customers evaluating silicon prototypes for next generation telecommunication and high-speed data applications,'' said Tony Giraudo, vice president and general manager of BiCMOS and custom ASIC products.
SiGe BiCMOS offers benefits not attainable by conventional silicon BiCMOS technologies; it enables lower noise, higher switching speed, and lower power consumption. This technology is the most advanced cost-effective semiconductor process for telecommunications and high-speed data applications and it provides an ideal platform for tomorrow's solutions for these rapidly expanding markets.
For more information about SiGe BiCMOS please visit atmel.com . |
