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Politics : Formerly About Applied Materials

AMAT 223.95

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Nov 21 9:30 AM EST

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To: Proud_Infidel who wrote (50293)	8/8/2001 3:27:35 PM
From: Proud_Infidel	Read Replies (1) of 70976

Toshiba to close memory fab in Japan, move DRAMs to 0.13-micron process Semiconductor Business News (08/08/01 09:11 a.m. EST) TOKYO -- Toshiba Corp. today announced it will phase out production of DRAMs with 0.20-micron processes and SRAMs with 0.40-micron technologies at the company's Yokkaichi chip plant in Japan as part of an overall strategy to reduce its losses in memory products. The company said it will close production in the Yokkaichi Fab 1 frontend line and transfer the majority of its 300 employees to different fabrication operations. "Present market conditions make it difficult to manufacture DRAM cost-effectively at 0.20 micron and above," said Jamie Stitt, director for DRAM products at Toshiba America Electronic Components Inc. in Irvine, Calif. "So, this move enables Toshiba to refocus efforts on producing DRAM at more advanced lithographies. "Toshiba continues to be dedicated to our DRAM business, as it provides the foundation for deploying advanced process technologies across the entire product line," added the U.S.-based manager. Yokkaichi currently produces 70,000 eight-inch wafers a month with the Fab 1 production line contributing about half of this output, Toshiba said. Currently, Fab. 1 makes about 7 million 64-megabit equivalent DRAMs per month using 0.20-micron process technology. It also fabricates 1 million 4-Mbit equivalent SRAMs per months with its 0.40-micron technology, according to Toshiba. The Japanese chip maker said it is concentrating DRAM efforts on moving new 512-Mbit memories into production using a 0.13-micron technology during the fourth quarter of this year.

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