Varian Semiconductor Announces Purchase of VIISta Implanter by ANAM Semiconductor
GLOUCESTER, Mass.--(BUSINESS WIRE)--Sept. 24, 2001--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - news), the leading supplier of ion implantation systems, today announced the purchase of a VIISta 80 single wafer high current implanter by ANAM Semiconductor, a leading Korean integrated circuit manufacturer.
The VIISta 80 implanter will be used primarily for high current applications, but it also has the unique capability to perform medium current processes resulting in a 30 percent throughput advantage for ANAM Semiconductor.
Jeong Lee, vice president of fab operations at ANAM Semiconductor, commented on his company's move to single wafer processing, ``We implemented a production strategy based on high equipment reliability and flexibility to cover high current processes and medium current processes as a back-up, to meet our customers' needs. The Varian Semiconductor VIISta 80 high current ion implanter provides us with the higher throughput we need, excellent compatibility, and excellent production reliability.''
Ernest Godshalk, president and chief operating officer of Varian Semiconductor, explained that ANAM Semiconductor has measured the throughput of the VIISta 80 high current tool and found it to be significantly higher than the throughput of competitive systems. The VIISta 80 achieved throughput of close to 300 wafers per hour in operation at mechanical limit.
``We are delighted that ANAM Semiconductor has selected Varian Semiconductor's VIISta platform for its high current implant needs,'' Godshalk said. ``Increasing numbers of advanced fabs, most recently, ANAM Semiconductor, are recognizing the production advantages of single wafer processing and the flexibility of the VIISta platform.''
The VIISta platform of implanters lowers customers' capital and operating costs because of the advantage of its common platform for single wafer technology, which increases scheduling flexibility and reduces maintenance and training expenses. ``The VIISta family of implanters provides the performance attributes necessary for next generation integrated circuits,'' Godshalk said. ``The highly parallel beam on the VIISta platform, combined with total incident angle control, enables the manufacture of integrated circuits having optimal threshold voltage control and the angular placement accuracy required for halo and pocket implants.''
The VIISta platform of parallel beam, single wafer implanters covers the entire range of ion implantation requirements, from 200eV through 3.75 MeV. The benefits derived from the parallel beam systems center around the precise placement of dopants in the device structures. Each implanter in the platform offers specific advantages in terms of integrated circuit performance.
For high current, the VIISta 80 presents an opportunity to improve junction abruptness control and increase the drive current and processing speed. For medium current, the VIISta 810 provides exceptional control of the Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer. For high energy, the VIISta 3000 provides additional accuracy in the placement of dopant species to enhance well-to-well isolation characteristics, reducing the size of the transistors and increasing the number of integrated circuits on the wafer. The VIISta 10 P2LAD ultra low energy ion implanter combines pulsed-plasma doping with the VIISta platform functionality to overcome the significant technical challenges posed by the requirements of low energy doping for ultra shallow junctions.
About Varian Semiconductor
Varian Semiconductor Equipment Associates is the leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in our web site is not incorporated by reference into this release, and our web site address is included in this release as an inactive textual reference only.
Note: This press release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning company's operating outlook, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms ``believes,'' ``anticipates,'' ``expects,'' ``plans,'' or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change; the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release. |
