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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 252.09-0.3%Jan 29 3:59 PM EST
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To: Bill Jackson who wrote (64484)11/28/2001 9:25:52 AM
From: Pravin KamdarRead Replies (1) of 275872
 
Bill,

Pravin, I sort of see. I had thought of the field as the voltage gradient. make it thinner and you always have a larger gradient and thus can tolerate less
voltage to keep the dv/ds within the insulation limits. A better insulator will allow a thinner layer before it punches through. Thinner is also more
capacitance.higher K allows more charge storage,

Nothing wrong with what you are saying here.

even at the same dv/ds so in that sense the field gradient does not change as you change the K.

There's a problem here. You're not going to get a higher field without more charge (remember drawing field lines between charges).

So you want lower K to get lower capacitance and the best insulation to keep punchthrough at bay as sizes get smaller??

NO! Not under the gate. You want a higher k to give a higher field, which also gives a higher capacitance. When I say punchthrough, I'm talking about shorting between the source and drain. To keep the gate dielectric from breaking down (not punching through) it's easier if the layer is thicker. This is possible, while supporting the necessary electric field with higher k dielectrics. Look, I don't have my old text books where I'm at either. Just trying to go from memory and what makes sense.

Now. Time to trade!

Pravin.
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